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Resistance model modeling method

A resistance model and modeling method technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve problems such as inability to guarantee accuracy and spend a lot of time, saving resistance modeling time and improving accuracy , the effect of simple extraction process

Active Publication Date: 2020-12-15
南京华大九天科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to improve the accuracy of the resistance model, complex formulas will be introduced in rsh and vc2, but these formulas cannot guarantee the accuracy under all W and L
Complex formulas often contain a large number of parameters, and the extraction of these parameters takes a lot of time

Method used

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Embodiment Construction

[0038] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0039] figure 1 For the flow chart of the resistance model modeling method according to the present invention, reference will be made below figure 1 , the resistance model modeling method of the present invention is described in detail.

[0040] First, in step 101, a matrix resistance test piece (Testkey) is designed according to GDR (Graphical Design Rules) requirements.

[0041] Preferably, the size of the resistors is distributed in a matrix, the size distribution is complete, and there is no vacancy in the middle. Testkey dimensions cover the maximum and minimum W / L values ​​specified in the GDR.

[0042] figure 2 It is a schematic diagram of a resistance t...

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Abstract

The invention relates to a resistance model modeling method, wherein the method comprises the following steps: 1) designing a matrix type resistance test piece according to a graphic design rule, andforming a resistance box model by adjacent four resistance sizes; 2) measuring a current and voltage characteristic curve of the matrix resistance test piece; 3) extracting model parameters of each size resistor according to a measurement result; 4) calculating the model parameters of each resistance box model according to the resistance model parameters; 5) synthesizing the model parameters of the resistance box models; and 6) extracting the temperature coefficient based on high and low temperature data. The resistance model modeling method provided by the invention can improve the model accuracy and save the modeling time.

Description

technical field [0001] The invention relates to the technical field of semiconductor design, in particular to a SPICE modeling method. Background technique [0002] Resistors are one of the important semiconductor passive devices, and circuit designers usually need to use resistors for circuit design. The accuracy of the resistance model will directly affect the accuracy of the circuit simulation, thereby affecting the results of the circuit tape-out. The current resistance model architecture is mainly: [0003] R=rsh*Tcoef*Vcoef (1) [0004] In the formula (1), R represents the resistance value, rsh represents the resistance value near normal temperature and voltage 0V, Tcoef represents the temperature coefficient, and Vcoef represents the voltage coefficient. rsh is usually a function of resistor width (W) and resistor length (L), and the common form of Tcoef is: [0005] Tcoef=1+(temper-25)*tc1+(temper-25)*(temper-25)*tc2 (2) [0006] In formula (2), temper represent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/367G06F119/08
CPCG06F30/367G06F2119/08
Inventor 傅飞
Owner 南京华大九天科技有限公司
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