Magnetic memory reading circuit capable of resisting single-event double-node upset based on C unit
A dual-node flip, anti-single particle technology, applied in static memory, digital memory information, information storage and other directions, can solve problems such as unreliable data reading
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[0057] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments.
[0058] A magnetic memory read circuit based on the C unit anti-single event dual-node flip in the embodiment of the present invention can not only realize the data information reading function with fast speed and low power consumption, but also has anti-single event during the data information reading process. The ability to flip over two nodes. The substantive features of the present invention will be further described below according to the accompanying drawings and specific implementation examples.
[0059] A magnetic tunnel junction (Magnetic T...
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