Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gas mixing equipment and gas mixing method for semiconductor manufacturing

A gas mixing, semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc., can solve problems such as easy condensation and affecting the quality of semiconductor manufacturing processes

Inactive Publication Date: 2020-10-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when a variety of gases are mixed, condensation is prone to occur, which affects the quality of the semiconductor manufacturing process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas mixing equipment and gas mixing method for semiconductor manufacturing
  • Gas mixing equipment and gas mixing method for semiconductor manufacturing
  • Gas mixing equipment and gas mixing method for semiconductor manufacturing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0020] Various schematic views of embodiments of the invention are shown in the drawings, which are not drawn to scale. Therein, certain details have been exaggerated and certain details may have been omitted for the sake of clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses gas mixing equipment and a gas mixing method for semiconductor manufacturing, relates to the technical field of semiconductor equipment, and aims to reduce the condensation probability of various gases in the mixing process and improve the quality of a semiconductor manufacturing process. The gas mixing equipment for semiconductor manufacturing is applied to a semiconductormanufacturing process and comprises a gas mixing container and a first heating device arranged on the gas mixing container. The gas mixing equipment and the gas mixing method for semiconductor manufacturing provided by the invention are used for manufacturing semiconductor devices and semiconductor chips.

Description

[0001] The present invention claims the priority of the Chinese patent application submitted to the State Intellectual Property Office on May 18, 2020, with the application number 202010421232.X and the title of the invention "a gas mixing device and mixing method for semiconductor manufacturing". The entire contents are incorporated herein by reference. technical field [0002] The invention relates to semiconductor equipment, in particular to a gas mixing equipment and mixing method for semiconductor manufacturing. Background technique [0003] In the semiconductor manufacturing process, many process steps need to introduce various gases into the process chamber. For example, when forming a thin film by chemical vapor deposition, a variety of reaction gases for forming the thin film are introduced into the process chamber. Before the gas is passed into the process chamber, it is necessary to mix the various gases uniformly. [0004] However, when a variety of gases are m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/67C23C16/455
CPCH01L21/67011H01L21/67017H01L21/67098H01L21/67207C23C16/45512
Inventor 徐康元王桂磊孔真真杨涛李俊峰王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products