Field plate, manufacturing method of semiconductor device and semiconductor device

Abstract

The invention discloses a field plate, a manufacturing method of a semiconductor device and the semiconductor device. The manufacturing method of the semiconductor device comprises the manufacturing method of the field plate. The manufacturing method of the field plate comprises the step of manufacturing field plate oxide layers with different thicknesses by adopting TEOS deposition and high-temperature thermal annealing methods, so that the thickness of the field plate oxide layers can be increased under the condition of not causing surface silicon damage, and the voltage endurance capabilityof the device can be improved; the preparation of the field plate is completed by two steps of etching: firstly, performing dry etching and wet rinsing to obtain a middle-stage field plate structure,and then performing dry etching on the end part of the middle-stage field plate structure to obtain a final-stage field plate structure, so that the edge defect of the middle-stage field plate structure caused by wet rinsing is eliminated, and the voltage-withstanding reliability of a device is improved. The manufacturing method of the semiconductor device and the semiconductor device comprise the manufacturing method of the field plate, and a field plate oxide layer with a large thickness can be obtained, and the voltage withstanding is reliable.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a field plate, a semiconductor device, and a semiconductor device. Background technique [0002] Field plate is a common terminal protection structure used to improve the resistance to high-voltage breakdown of semiconductor devices. In high-voltage devices, it is necessary to form a large-thickness field plate oxide layer under the polysilicon or metal field plate to reduce the vertical electric field intensity of the field plate terminal. , improve the breakdown voltage, and improve the withstand voltage reliability of the device. [0003] In the traditional method, the thermal oxidation method is used to make the field plate oxide layer, and the thermal oxidation method only grows the oxide layer in the field area. If it is too thick, it will cause the loss of the field oxide layer in the subsequent etching process, making the traditional ther...

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Problems solved by technology

[0003] In the traditional method, the thermal oxidation method is used to make the field plate oxide layer, and the thermal oxidation method only grows the oxide layer in the field area. If it is too thick, it will cause the loss of the field oxide layer in the subsequent etching process, making the traditional thermal oxidation method. The thickness of the field plate oxide layer is generally less than 300 angstroms, and the reliability of the withstand voltage is low; while the high temperature oxide layer (HTO) deposition method can avoid the above problems, but requires special high temperature oxide layer deposition equipment, and the production cost is high

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