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Inverted Micro LED full-color quantum dot chip and preparation method and application thereof

A quantum dot and chip technology, applied in the field of LED chips, can solve the problem that a single LED chip cannot obtain full color effect, achieve the effect of huge transfer efficiency and yield, save wafer area, and save chip cost

Pending Publication Date: 2020-06-23
LEDMAN OPTOELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In view of the problem that a single LED chip cannot obtain full-color effects in the prior art, the purpose of the present invention is to provide a flip-chip Micro LED full-color quantum dot chip, its preparation method and application

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  • Inverted Micro LED full-color quantum dot chip and preparation method and application thereof
  • Inverted Micro LED full-color quantum dot chip and preparation method and application thereof
  • Inverted Micro LED full-color quantum dot chip and preparation method and application thereof

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Embodiment 1

[0058] The front view of the flip-chip Micro LED full-color quantum dot chip structure in this embodiment is as follows figure 1 As shown, the left view is as figure 2 As shown, the top view is as image 3 As shown, it contains a substrate 1, a first blue light epitaxial layer 2, a first indium tin oxide layer 3, a first light-emitting quantum dot layer 4, a first transparent bonding material layer 5, a second blue light epitaxial layer 6, a second Indium tin oxide layer 7, second luminescent quantum dot layer 8, second transparent bonding material layer 9, third blue light epitaxial layer 10, third indium tin oxide layer 11, DBR reflective layer 12, fourth P electrode 13, fourth An N electrode 14 , a second N electrode 15 and a third N electrode 16 .

[0059] The substrate 1 described in this embodiment is a sapphire substrate with a thickness of 100 μm; the first blue light epitaxial layer 2 includes a blue light N-type gallium nitride layer with a thickness of 20 nm and ...

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Abstract

The invention relates to an inverted Micro LED full-color quantum dot chip and a preparation method and application thereof. According to the inverted Micro LED full-color quantum dot chip provided bythe invention, a red, blue and green light-emitting structure can be formed on a single LED chip, an RGB array does not need to be arranged, and the transfer efficiency and yield can be greatly improved; the single chip not only can complete full-color light emitting, but also can save wafer area and chip cost, thereby facilitating large-scale production of downstream enterprises; and the additional quantum material can prevent the display effect of the chip from being affected by current fluctuation. According to the inverted Micro LED full-color quantum dot chip, three negative electrodes and one common positive electrode are arranged in the inverted Micro LED full-color quantum dot chip, so that red, green and blue independent light color light emitting, or simultaneous light emittingof two light colors or simultaneous light emitting of three light colors can be realized on one chip, and light emitting color adjustability is realized.

Description

technical field [0001] The invention belongs to the technical field of LED chips, and in particular relates to a flip-chip Micro LED full-color quantum dot chip, its preparation method and application. Background technique [0002] LED lights are now widely used lighting fixtures. They have the advantages of small size, high brightness, low power consumption, less heat generation, long service life, environmental protection, etc., and have a variety of colors, which are deeply loved by consumers. [0003] The production of LED lights can be roughly divided into three steps: one is the production of LED light-emitting chips, the other is the production of circuit boards and the packaging of LED light-emitting chips, and the third is the assembly of LED lights. The most important part in the LED lamp is the LED light-emitting chip. The main body of the LED light-emitting chip is a light-emitting PN junction, which is mainly composed of an N-type semiconductor, a P-type semicon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/08H01L33/06H01L33/38H01L33/00B82Y40/00
CPCB82Y40/00H01L33/007H01L33/06H01L33/08H01L33/382
Inventor 李漫铁余亮屠孟龙
Owner LEDMAN OPTOELECTRONICS
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