Epitaxial growth device and manufacturing method thereof

Abstract

The invention provides an epitaxial growth device and a manufacturing method thereof, and belongs to the technical field of semiconductors. The epitaxial growth device comprises a first quartz bell jar and a funnel-shaped second quartz bell jar, wherein the first quartz bell jar and the second quartz bell jar form a reaction chamber, a base for placing a silicon wafer and a base support frame forsupporting the base are arranged in the reaction chamber, heating bulbs for providing reaction energy are arranged outside the reaction chamber, and comprise a first heating bulb located on the side,close to the first quartz bell jar, of the base and a second heating bulb located on the side, close to the second quartz bell jar, of the base, the epitaxial growth device further comprises a light path control structure located in the reaction chamber and arranged between the second heating bulb and the base, and the light path control structure can refract part of light emitted by the second heating bulb and entering the reaction chamber through the funnel surface of the second quartz bell jar to an area far away from the center of the silicon wafer. According to the invention, the film forming uniformity of an epitaxial film can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial growth device and a manufacturing method thereof. Background technique [0002] Epitaxial wafers are generally obtained by growing an epitaxial film on a silicon wafer by chemical vapor deposition. In the epitaxial growth device, the silicon wafer is exposed to the reaction gas, and a layer of silicon single crystal film is formed on the surface of the silicon wafer through chemical vapor phase reaction. [0003] Existing epitaxial growth devices such as figure 1 As shown, it includes an upper quartz bell jar 1 and a lower quartz bell jar 6, and the upper quartz bell jar 1 and the lower quartz bell jar 6 form a reaction chamber through a mounting part 3, and the reaction chamber includes an air inlet and an exhaust port, wherein 4 is an air flow direction, a base 5 for placing the silicon wafer 2 is provided inside the reaction chamber, and a base support fr...

AI Technical Summary

Problems solved by technology

[0004] The thickness of the epitaxial film is one of the most important technical indicators. During the epitaxial reaction process, the phenomenon of uneven film thickness often occurs due to the high temperature in the central area of ​​the silicon wafer, that is, the temperature in the central area of ​​the silicon wafer is too high. , causing the chemical reaction rate in this region to be fast, and the resulting silicon film is thicker or even too thick

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