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A tunable near-infrared three-array periodic broadband light absorption enhancement structure

A technology to enhance the structure and array period, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low light absorption rate and limit the application of graphene

Active Publication Date: 2022-01-21
苏州众为光电有限公司
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  • Abstract
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Problems solved by technology

However, although graphene has a strong light-matter interaction, it has an extremely low absorbance due to its atomic thickness (0.34nm)
In the visible and near-infrared bands, the light absorption rate of graphene is only 2.3%, which greatly limits the application of graphene in the field of photodetectors.

Method used

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  • A tunable near-infrared three-array periodic broadband light absorption enhancement structure
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  • A tunable near-infrared three-array periodic broadband light absorption enhancement structure

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Embodiment Construction

[0022] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the implementation methods in the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] In the drawings, the shapes and dimensions may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like parts.

[0024] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. "First", "second" and similar words used in the patent application spe...

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Abstract

The invention discloses an adjustable near-infrared three-array periodic broadband light absorption enhancement structure, which includes a graphene layer, a metal micro-nano array layer, a dielectric layer and a base layer sequentially stacked from top to bottom, wherein the graphite A lower transparent conductive layer, a dielectric insulating layer, and an upper transparent conductive layer are arranged in sequence from bottom to top above the alkene layer, and a DC power supply is electrically connected between the lower transparent conductive layer and the upper transparent conductive layer; the metal micro-nano The array layer includes at least one group of array units arranged in the same layer, and each group of array units includes a first row of micro-nano particles, a second row of micro-nano particles and a third row of micro-nano particles arranged at intervals along an array direction. According to the present invention, by changing the magnitude of the applied voltage, its light absorption spectrum can be adjusted to meet the application requirements in different resonance frequency ranges.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an adjustable near-infrared three-array periodic broadband light absorption enhancement structure. Background technique [0002] As an important information perception device, photodetectors have greatly promoted the development of human science and technology and the process of informatization. Broad-spectrum detection and imaging have broad application prospects in the fields of satellite remote sensing, imaging, and optical communication. Near-infrared wide-spectrum detectors as a key part have very important research value. At present, traditional infrared detectors based on materials such as mercury cadmium telluride (HgCdTe) and indium gallium arsenic (InGaAs) usually require refrigeration in order to improve the signal-to-noise ratio, resulting in large size and high cost of the detector. Realizing portable and low-cost infrared detection is an important developme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/028
CPCH01L31/02327H01L31/028
Inventor 刘永杜明
Owner 苏州众为光电有限公司
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