Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A cultivation method and moss technology, applied in the field of moss cultivation, can solve the problems of unstable properties, single growth environment, low moss proliferation rate, etc., and achieve the effect of improving stress resistance
Active Publication Date: 2020-06-05
丽水市润生苔藓科技有限公司
View PDF6 Cites 4 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
Of the above two planting modes, one has a low moss proliferation rate and is more like a porter of nature, buying and selling; the other is because the growth environment is too suitable and single, and the water replenishment mode is spraying at the top, which is affected by the water tendency of moss. causing upward leggy
In subsequent applications, after changing the planting environment, the elongated stem will wither first and then regenerate new shoots, that is, the character is unstable and the adaptability to different construction conditions is weak.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0025] The present invention proposes a kind of cultivation method of moss, comprises the following steps:
[0026] 1): Wash the moss seedlings in clean water to remove the dirt and sand, screen out the mixed impurities, and then sterilize them in 5000 times potassium permanganate solution for 5 minutes, rinse them twice with clean water to remove permanganate Potassium residues, then use a dehydrator to remove excess water and crush them into 0.5cm-long broken stems for later use. When long-term storage is required, first dry the broken stems in the shade;
[0027] 2): Sow the moss seedlings treated in 1) evenly on the surface of the planting blanket, place the sown planting blanket in the moss cultivation room for cultivation, control the light intensity at 5000LUX, and cultivate at 15°C. Water the seedlings, keep the humidity in the planting room at 80%, and add specially prepared water and fertilizer to the leaves once a week;
[0028] 3): After drying the moss stems with...
Embodiment 2
[0033] The present invention proposes a kind of cultivation method of moss, comprises the following steps:
[0034] 1): Wash the moss seedlings in clean water to remove the dirt and sand, screen out the mixed impurities, and then sterilize them in 5000 times potassium permanganate solution for 5 minutes, rinse them twice with clean water to remove permanganate Potassium residues, then use a dehydrator to remove excess water and crush them into 0.5cm-long broken stems for later use. When long-term storage is required, first dry the broken stems in the shade;
[0035] 2): Sow the moss seedlings treated in 1) evenly on the surface of the planting blanket, place the sown planting blanket in the moss cultivation room for cultivation, control the light intensity at 5000LUX, and cultivate at 15°C. Water the seedlings, keep the humidity in the planting room at 80%, and add specially prepared water and fertilizer to the leaves once a week;
[0036] 3): Make a replenishable water stora...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
The invention discloses a method for cultivating moss. The method comprises the following steps: uniformly covering crushed moss stems and leaves with a thin layer on a moss planting blanket, and placing the moss stems and leaves in a moss cultivation chamber for cultivation; control illuminance at 2,000-10,000 LUX and temperature at 18-30DEG C for cultivation; supplementing water with a fog facility every day, keeping indoor humidity above 80%, and fertilizing foliage once a week; after new buds are germinated, stopping water supply, after drying in shade, transferring the stem segments to aplanting module with water storage at a bottom and tiled matrix soil at a top, and culturing the stem segments in an open environment, and inducing growth of the moss close to a surface by means of water guide by water guiding cloth at the bottom and the bottom water supplement by transpiration at the bottom; setting a shading net with a shading rate of 85% above the planting module when under a high temperature and strong light environment; when new buds of the moss grow into stem segments, the stem leaves are twisted into pieces, application standard is reached. The method cultivates the moss in various ways, can make the moss have good stress resistance and appearance, and is suitable for various working conditions such as transplanting and processing.
Description
technical field [0001] The invention relates to the technical field of moss cultivation, in particular to a moss cultivation method. Background technique [0002] At present, the existing moss planting modes mainly include moss collected from the wild and domesticated directly in the planting site, and moss stems and leaves broken up to promote growth in a specific environment. Of the above two planting modes, one has a low moss proliferation rate and is more like a porter of nature, buying and selling; the other is because the growth environment is too suitable and single, and the water replenishment mode is spraying at the top, which is affected by the water tendency of moss. Cause upward leggy. In the subsequent application, it is easy to have the process of changing the planting environment, and the elongated stem first withers and then regenerates new shoots, that is, the character is unstable and the adaptability to different construction conditions is weak. Content...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more 
Login to view more