A transistor structure with double buried oxide layer and its preparation method

Abstract

The invention provides a transistor structure with a double buried oxide layer and a preparation method thereof, comprising: a top silicon layer, an active region, and a shallow trench isolation region from top to bottom, and the active region includes: a top silicon layer located above The gate, the gate dielectric layer, the source and the drain located at the lateral ends of the top silicon layer; the first buried oxide layer; the second silicon layer; the second buried oxide layer; the substrate silicon layer; The isolation region, the through hole of the first buried oxide layer, the through hole is implanted or doped with particles, and an ohmic contact region is formed at the interface between the second silicon layer and the through hole; through the shallow trench isolation region, the first buried oxide layer in sequence layer and the deep trench isolation region formed by the second silicon layer; and a defect layer formed at the interface between the substrate silicon layer and the second buried oxide layer. The transistor structure provided by the invention can realize lower substrate loss and harmonic noise, so that the device can realize higher radio frequency characteristics under harsh conditions, and realize integration with digital circuits and analog circuits.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a transistor structure with a double-buried oxide layer and a preparation method thereof. Background technique [0002] SOI technology (the full name of SOI is Silicon-On-Insulator, that is, silicon on insulating substrate, which is to introduce a buried oxide layer between the top silicon and the back substrate) has low power consumption, high speed, and anti-latch-up And excellent radio frequency performance and other characteristics, while SOI technology has excellent radiation resistance performance, and is widely used in the aerospace field. SOI technology is generally divided into two kinds of partial depletion and full depletion technology. For partially depleted SOI technology, a high-resistance substrate, such as HR SOI or TR SOI substrate, can be used to improve the radio frequency characteristics of the device and reduce harmonic noise. The fully deplet...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a transistor structure with a double buried oxide layer and its preparation method, so as to solve the problem that the high-resistance substrate and the back gate voltage function cannot be shared in the prior art, so it is difficult to use the back gate voltage adjustment technology to realize high-performance radio frequency circuit problem

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