Heat transfer device based on semiconductor wafer and equipment adopting device

A technology of semiconductors and wafers, applied in the field of thermoelectric conversion devices, can solve the problems of inability to efficiently cool and heat semiconductors, lack of thermoelectric power generation, etc., and achieve the effects of high-efficiency heat transfer, high-efficiency cooling and heating

Pending Publication Date: 2020-02-28
HUNAN CHUANGHUA LOW CARBON ENVIRONMENTAL PROTECTION TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] The technical problem solved by the present invention is to provide a semiconductor wafer-based heat transfer device to solve the technical problem in the prior art that the semiconductor cannot efficiently cool and heat or lacks the technical design of thermoelectric power generation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heat transfer device based on semiconductor wafer and equipment adopting device
  • Heat transfer device based on semiconductor wafer and equipment adopting device
  • Heat transfer device based on semiconductor wafer and equipment adopting device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0098] see figure 1 , the semiconductor wafer-based heat transfer device provided by the present invention includes a semiconductor wafer 3 and two heat conducting plates 1, and the semiconductor wafer 3 is sandwiched between the two heat conducting plates 1;

[0099] Fluid channels 2 are opened on the two heat conducting plates 1;

[0100] The semiconductor wafer 3 is located between the two fluid channels 2; the two fluid channels 2 respectively pass through two fluids with a temperature difference and opposite flow directions;

[0101] Wherein, the electric arm at the first end of the semiconductor wafer 3 and the electric arm at the second end are connected to a DC power supply device, so as to realize heat transfer between the first end surface and the second end surface of the semiconductor wafer 3;

[0102] Alternatively, the electrical arm at the first end and the electrical arm at the second end of the semiconductor wafer 3 are respectively connected to electrical lo...

no. 2 example

[0119] see figure 2 , based on the heat transfer device provided by the first embodiment of the present invention, the second embodiment of the present invention provides another heat transfer device, the difference is:

[0120] The heat transfer device further includes a guide tube 9 , the guide tube 9 is arranged on the heat conduction plate 1 , and the guide tube 9 is arranged around the fluid channel 2 . In this embodiment, the number of the semiconductor wafers 3 is four.

[0121] Heat insulating material may be filled between the two heat conducting plates 1 and between the two guide tubes 9 to prevent loss of heat and cold.

no. 3 example

[0123] see image 3 , a heat transfer device based on a semiconductor wafer, comprising a semiconductor wafer 3 and two heat conduction plates 1, the semiconductor wafer 3 being sandwiched between the two heat conduction plates 1;

[0124] The heat transfer device 21 also includes two guide posts 6, the two guide posts 6 are respectively arranged on the two heat conduction plates 1, and the fluid guide posts 6 are provided with the fluid channel 2;

[0125] The semiconductor wafer 3 is located between the two fluid channels 2; the two fluid channels 2 respectively pass through two fluids with a temperature difference and opposite flow directions;

[0126] Wherein, the electric arm at the first end of the semiconductor wafer 3 and the electric arm at the second end are connected to a DC power supply device, so as to realize heat transfer between the first end surface and the second end surface of the semiconductor wafer 3;

[0127] Alternatively, the electrical arm at the fir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a heat transfer device based on a semiconductor wafer and equipment adopting the device. The device comprises the semiconductor wafer and two heat conducting plates. Fluid channels are arranged in the heat conduction plates, or, two flow guide columns are included. The flow guide columns are arranged on the heat conduction plates, and each flow guide column is provided withthe fluid channel. Two strands of fluids with a temperature difference and opposite flowing directions pass through the two fluid channels. Heat transfer can be realized between a first end surface and a second end surface of the semiconductor wafer, or temperature difference power generation can be realized between a first end and a second end of the semiconductor wafer. The heat transfer deviceof the invention can realize high-efficiency refrigeration and heating, can realize temperature difference power generation, can replace a heavy compressor, and realizes semiconductor refrigeration and heating air conditioners, semiconductor refrigerators, semiconductor refrigeration storage, semiconductor temperature difference power generation and the like with relatively high economic values sothat purposes of energy conservation and cost reduction are achieved.

Description

technical field [0001] The invention relates to the technical field of thermoelectric conversion devices, in particular to a heat transfer device based on a semiconductor wafer and equipment using the device. Background technique [0002] The unsatisfactory performance of current thermoelectric materials is one of the main reasons for the low efficiency of semiconductor thermoelectric power generation. The main performance parameter to measure thermoelectric materials is the dimensionless figure of merit ZT of thermoelectric materials: [0003] [0004] In the formula, α is the Seebeck coefficient; σ is the electrical conductivity; λ is the thermal conductivity; T is the absolute temperature. The higher the dimensionless figure of merit ZT of a thermoelectric material, the better its thermoelectric performance and the higher its thermoelectric conversion efficiency. Through the above formula, we know that the higher the Seebeck coefficient and electrical conductivity, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02N11/00
CPCH02N11/002
Inventor 刘小江刘哲勤
Owner HUNAN CHUANGHUA LOW CARBON ENVIRONMENTAL PROTECTION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap