Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A flexible strain sensor with regular crack structure and its manufacturing method

A technology of strain sensor and crack, applied in the direction of electric/magnetic solid deformation measurement, electromagnetic measurement device, etc., can solve the problems of low cost and large-scale production of flexible strain sensor, poor consistency of flexible strain sensor, long recovery time, etc. Achieve the effects of flexible adjustment methods, improved mechanical properties and structural stability, and low production costs

Active Publication Date: 2021-08-17
HEFEI UNIV OF TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to avoid the deficiencies in the above-mentioned prior art, the present invention proposes a flexible strain sensor with a regular crack structure and its manufacturing method based on the method of printing and then cutting or direct printing, aiming at solving the problem of existing flexible strain sensors. Poor sensor consistency, poor reliability, low repeatability, low sensitivity, slow response time, and long recovery time, etc., while solving the problem that flexible strain sensors are difficult to achieve low cost and mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A flexible strain sensor with regular crack structure and its manufacturing method
  • A flexible strain sensor with regular crack structure and its manufacturing method
  • A flexible strain sensor with regular crack structure and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Such as figure 1 As shown, the flexible strain sensor with a regular crack structure in this embodiment has a layered structure, the top layer and the bottom layer are the insulating packaging layers of the flexible strain sensor, and the middle is the mechanically sensitive layer of the flexible strain sensor. The mechanically sensitive layer is composed of a high conductive material layer with regular cracks on the upper layer and a semiconductive material layer on the lower layer.

[0069] Specifically, the insulating encapsulation layer uses polydimethylsiloxane, a flexible polymer material.

[0070] Specifically, the regular cracks on the highly conductive material layer with regular cracks are obtained by cutting after processing into a film. Regular cracks are periodic linear cracks, the width of a single crack is 1 micron, and the distance between adjacent cracks in the same direction is 150 microns. The sheet resistance value of the highly conductive material...

Embodiment 2

[0091] Such as Figure 9 As shown, the flexible strain sensor with a regular crack structure in this embodiment has a layered structure, the top layer and the bottom layer are the insulating packaging layers of the flexible strain sensor, and the middle is the mechanically sensitive layer of the flexible strain sensor. The mechanically sensitive layer is provided with a semi-conductive material layer on both the upper surface and the lower surface of the highly conductive material layer with regular cracks.

[0092] Specifically, the insulating encapsulation layer uses polydimethylsiloxane, a flexible polymer material.

[0093] Specifically, the regular cracks on the highly conductive material layer with regular cracks are obtained by cutting after processing into a film. Regular cracks are periodic linear cracks, the width of a single crack is 1 micron, and the distance between adjacent cracks in the same direction is 150 microns. The sheet resistance value of the highly co...

Embodiment 3

[0100] Such as Figure 11 As shown, the flexible strain sensor with a regular crack structure in this embodiment has a layered structure, the top layer and the bottom layer are the insulating packaging layers of the flexible strain sensor, and the middle is the mechanically sensitive layer of the flexible strain sensor. The mechanically sensitive layer is provided with a layer of highly conductive material layer with regular cracks on both the upper surface and the lower surface of the semiconductive material layer.

[0101] Specifically, the insulating encapsulation layer uses polydimethylsiloxane, a flexible polymer material.

[0102] Specifically, the regular cracks on the highly conductive material layer with regular cracks are obtained by cutting after processing into a film. Regular cracks are periodic linear cracks, the width of a single crack is 1 micron, and the distance between adjacent cracks in the same direction is 150 microns. The sheet resistance value of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a flexible strain sensor with a regular crack structure and a manufacturing method thereof, which is a layered structure, the top layer and the bottom layer are insulating packaging layers of the flexible strain sensor, and the middle is a mechanically sensitive layer of the flexible strain sensor; wherein the mechanically sensitive The layers include at least one layer of highly conductive material with regular cracks and at least one layer of semiconductive material. The flexible strain sensor of the present invention has the characteristics of high consistency, high repeatability, high sensitivity and high stretchability, and its manufacturing process is simple, the manufacturing cost is low, it is easy to produce on a large scale, and it has extremely high market value and industrialization potential.

Description

technical field [0001] The invention belongs to the technical field of sensor manufacturing, and in particular relates to a flexible strain sensor with a regular crack structure and a manufacturing method thereof. Background technique [0002] Flexible strain sensors can not only sense the stiffness, texture, and shape of the acting object, but also measure multimodal tactile information such as pressure, stretch, sliding, and vibration corresponding to the perception ability of human skin. As a new sensor device, Harvard University, Stanford University, Tokyo University, Tsinghua University, Hefei Institute of Intelligent Machinery, Chinese Academy of Sciences, and Hefei University of Technology have conducted continuous research in this field at home and abroad. The research history of related work is only more than 20 years, and the existing work mainly focuses on applied basic research such as sensitive material design, static and dynamic performance optimization, sensor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01B7/16
CPCG01B7/20
Inventor 刘平
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com