A low-cost preparation method of titanium-silicon alloy target

A titanium-silicon alloy, low-cost technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve problems such as uneven structure, composition segregation, brittle cracks, etc., to improve composition uniformity and metallurgy The effect of uniform quality, structure and composition, and fine grain structure

Active Publication Date: 2020-12-01
上海交通大学包头材料研究院 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] According to literature reports, conventional smelting methods for titanium-silicon targets have problems such as alloy brittleness, composition segregation, and uneven structure, and the silicon content is generally lower than 15% (mass ratio), and the ingot with a silicon content greater than 15% is prone to Cracking phenomenon, while the silicon content is less than 15%, prone to composition segregation or brittle cracks
CN102699325A and CN102321833A respectively provide a method for preparing titanium-silicon or titanium-aluminum-silicon targets by hot pressing and sintering. Preparation and wide application, unable to meet the requirements of tools and molds for the use of coating layers

Method used

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  • A low-cost preparation method of titanium-silicon alloy target
  • A low-cost preparation method of titanium-silicon alloy target
  • A low-cost preparation method of titanium-silicon alloy target

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Embodiment 1

[0039] The titanium-silicon alloy target of the present invention is made of the following raw materials in mass fraction: 93.5% of sponge titanium and 6.5% of crystalline silicon;

[0040] The purity of the titanium sponge is ≥99.6%, and the purity of the crystalline silicon is ≥99.68%.

[0041] The preparation method of the titanium-silicon alloy target in this embodiment includes the following steps:

[0042] (1) Mixing: uniformly mix titanium sponge (with a particle size of 1 mm) and crystalline silicon (with a particle size of 2 mm) using a three-dimensional mixer, and the mixing time is 5 minutes;

[0043] (2) Electrode pressing: Use a 630-ton hydraulic press to press the uniformly mixed raw materials into electrode rods with a diameter of 35×45×380 mm, each electrode rod is 2.5 kg; keep it in an oven at 90°C for 3.5 hours.

[0044] (3) One-time consumable smelting: use an argon arc welding machine under a protective atmosphere to weld an appropriate number of electrode...

Embodiment 2

[0050] The titanium-silicon alloy target of the present invention is made of the following atomic percentages of raw materials: sponge titanium titanium 87.5%, crystalline silicon 12.5%;

[0051] The purity of the titanium sponge is ≥99.6%, and the purity of the crystalline silicon is ≥99.68%.

[0052] The preparation method of the titanium-silicon alloy target in this embodiment includes the following steps:

[0053] (1) Mixing: uniformly mix titanium sponge (particle size: 10mm) and crystalline silicon (size: 6mm) using a three-dimensional mixer, and the mixing time is 8 minutes;

[0054] (2) Electrode pressing: Use a 630-ton hydraulic press to press the uniformly mixed raw materials into electrode rods with a diameter of 35×50×380 mm, each electrode rod is 2.8 kg; keep it in an oven at 100°C for 4 hours.

[0055] (3) One-time consumable smelting: use an argon arc welding machine under a protective atmosphere to weld an appropriate amount of electrode rods in step (2) toget...

Embodiment 3

[0061] The titanium-silicon alloy target of the present invention is made of the following atomic percentages of raw materials: sponge titanium titanium 80%, crystalline silicon 20%;

[0062] The purity of the titanium sponge is ≥99.6%, and the purity of the crystalline silicon is ≥99.68%.

[0063] The preparation method of the titanium-silicon alloy target in this embodiment includes the following steps:

[0064] (1) Mixing: uniformly mix titanium sponge (with a particle size of 8mm) and crystalline silicon (with a size of 6mm) using a three-dimensional mixer, and the mixing time is 10 minutes;

[0065] (2) Electrode pressing: Use a 630-ton hydraulic press to press the uniformly mixed raw materials into electrode rods with a diameter of 35×60×380 mm, and each electrode rod is 4.5 kg; keep warm in an oven at 110 ° C for 6 hours.

[0066] (3) One-time consumable smelting: use an argon arc welding machine under a protective atmosphere to weld an appropriate number of electrode ...

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Abstract

The invention provides a low-cost preparation method of a titanium silicon alloy target material. The low-cost preparation method of the titanium silicon alloy target material comprises the following steps of A, mixing: uniformly mixing sponge titanium and crystal silicon according to the proportion; B, pressing an electrode: pressing the mixed raw material into an electrode rod, and heating the electrode rod; C, carrying out self-consumption smelting for the first time: under a protective atmosphere, welding the heated electrode, then carrying out vacuum self-consumption smelting for the first time, and obtaining a primary ingot of titanium silicon alloy; D, welding: after flattening two ends of the primary ingot of the titanium silicon alloy, combining and welding the primary ingot of the titanium silicon alloy by utilizing a vacuum electron beam welding technology, and obtaining an electrode material; E, carrying out self-consumption smelting for the second time: carrying out vacuum self-consumption smelting on the electrode material for the second time, and obtaining a secondary ingot of the titanium silicon alloy; and F, processing the secondary ingot of the titanium silicon alloy, and obtaining the final titanium silicon target material. The titanium silicon target material prepared by the method provided by the invention has a compact structure, and is uniform and fine, high in raw material production rate, low in cost, and suitable for engineering mass production.

Description

technical field [0001] The invention relates to the technical field of preparation technology of a target material for material surface modification and coating, in particular to a low-cost preparation method of a titanium-silicon alloy target material. Background technique [0002] With the rapid development of the electronic information industry and the improvement of social environmental protection awareness, the application of thin film science is becoming more and more extensive, and the surface coating process of materials has also developed from traditional electroplating and electroless plating to vacuum sputtering coating technology. The vacuum sputtering method has become one of the main technologies for preparing thin film materials, and is widely used in the coating fields of hardware decoration, electronic products, automobiles and buildings. Therefore, the demand for coated targets in the above fields is increasingly urgent, and higher and higher requirements a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C22C1/02C22C14/00
CPCC22C1/02C22C14/00C23C14/3414
Inventor 毛建伟吕维洁韩远飞黄光法
Owner 上海交通大学包头材料研究院
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