Substrate cleaning head and substrate cleaning device

Abstract

The invention discloses a substrate cleaning head. The substrate cleaning head comprises a disc-shaped base with a certain thickness and a circular cleaning pad which is concentrically connected to the lower surface of the base, the base is provided with a plurality of fluid channels in the thickness direction, the cleaning pad is provided with a plurality of through holes, each through hole is coupled to different fluid channels, so that cleaning liquid can be sprayed to the surface of a substrate via one part of the plurality of through holes and can be sucked away through the other part ofthe through holes after being combined with pollutants, the section radius of the cleaning pad is smaller than the radius of the cross section of the base, an inclined through flushing channel is arranged on the outer peripheral side of the base, so that the flushing fluid can flow out through the upper port and the flushing channel from the upper port at the outer side of the cleaning pad so as to remove the pollutants attached to the peripheral side of the cleaning pad.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular relates to a substrate cleaning head and a substrate cleaning device. Background technique [0002] With the rapid development of the semiconductor industry, the feature size of integrated circuits tends to be miniaturized, and semiconductor chips are developing in the direction of small volume, high circuit density, fast speed, and low power consumption. Integrated circuits have now entered the submicron level of ultra-large-scale integrated circuits technical stage. With the gradual increase of the diameter of the silicon wafer, the width of the reticle in the component is gradually reduced, the number of metal layers is increased, and the flattening of the surface of the semiconductor film has an important impact on the high performance, low cost, and high yield of the device. The surface of the silicon wafer The flatness requirements will become increa...

AI Technical Summary

Problems solved by technology

The vertical cleaning unit can save equipment space, and the process consistency of megasonic cleaning and scrubbing is better. However, due to the influence of gravity during the drying process, the drying effect is not as good as that of the horizontal method, and the horizontal cleaning unit is not conducive to the timely removal of pollutants. Remove the substrate surface

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