Method for preparing epitaxial wafer of light-emitting diode and epitaxial wafer

Abstract

The invention discloses a method for preparing an epitaxial wafer of a light-emitting diode and the epitaxial wafer and belongs to the field of light-emitting diode fabrication. A gallium source is intermittently introduced into a reaction chamber and an aluminum source is continuously introduced into the reaction chamber, the intermittent introduction of the gallium source allows an appropriate amount of gallium atoms to exist in the reaction chamber, the appropriate amount of gallium atoms act as an activator, the quality of an obtained AlGaN buffer sub layer is good, a AlN buffer sub layeris welled matched with the AlGaN buffer sub layer with appropriate amount of gallium atoms, and the quality of the AlN buffer sub layer grown on the AlGaN buffer sub layer is improved. When the AlN buffer sub layer is grown, due to the gas phase reaction between an ammonia gas and the aluminum source, a part of the reactants generated by the reaction are incorporated into the AlN buffer sub layer,and the quality of the AlN buffer sub layer is affected. The ammonia gas is intermittently introduced, the reduction of the ammonia gas can inhibit the gas phase reaction between aluminum and the ammonia gas, a reactant of the ammonia gas and aluminum source reaction growth is reduced and is combined into the AlN buffer sub layer, and finally the crystal quality of the epitaxial wafer is improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a method for preparing an epitaxial wafer of a light-emitting diode and the epitaxial wafer. Background technique [0002] The epitaxial wafer is the basic structure for making light-emitting diodes. The structure of the epitaxial wafer includes a substrate and an epitaxial layer grown on the substrate. Among them, the structure of the epitaxial layer mainly includes: an AlN buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer grown sequentially on the substrate. [0003] The AlN buffer layer between the substrate and the non-doped GaN layer can reduce the lattice mismatch between the substrate and the non-doped GaN layer, but the quality of the AlN buffer layer directly grown on the substrate is still There are certain defects, which affect the quality of the non-doped GaN layer, N-type GaN layer, multi-quantu...

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Problems solved by technology

[0003] The AlN buffer layer between the substrate and the non-doped GaN layer can reduce the lattice mismatch between the substrate and the non-doped GaN layer, but the quality of the AlN buffer layer directly grown on the substrate is still There are certain defects, which affect the quality of the non-doped GaN layer, N-type GaN layer, multi-quantum well layer and P-type GaN layer grown on the AlN buffer layer, resulting in the crystal quality of the final epitaxial wafer is still not ideal

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