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Concave surface array graphene-metal heterojunction photoelectric detector

A photodetector and graphene technology, which is applied in the field of communication and sensors, can solve the problems of low graphene absorption, graphene damage, and small light-receiving surface, and achieve the effects of increased absorption, increased sensitivity, and high integration

Pending Publication Date: 2019-08-20
GUANGXI NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The current mainstream structure of graphene photodetectors is a planar structure, so the light receiving surface is small, and graphene absorbs less light, and the general graphene photodetectors transfer the prepared graphene to the detector on the substrate, so graphene is prone to damage during the transfer process

Method used

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  • Concave surface array graphene-metal heterojunction photoelectric detector
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Embodiment

[0046] like Figure 1 to Figure 4 As shown, the graphene-metal heterojunction photodetector of the concave array includes a substrate 1; an insulating layer 2, a growth layer 3, and a graphene layer 4 are sequentially arranged on the substrate 1 from bottom to top;

[0047] The substrate 1 is provided with a downwardly recessed groove 11; the insulating layer 2 is provided with a downwardly protruding first convex surface 21 matching the groove 11;

[0048]The growth layer 3 is provided with a second convex surface 31 that protrudes downward and matches the inner groove of the first convex surface 21; The groove matches the third convex surface 41;

[0049] An anti-reflection layer 5 is arranged on the inner wall of the inner groove of the third convex surface 41 of the graphene layer 4; the two sides of the groove 11 on the substrate 1 are respectively provided with 6 high work function electrodes 6 and low work function electrodes 7.

[0050] The insulating layer 2 is mad...

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Abstract

The invention discloses a concave surface array graphene-metal heterojunction photoelectric detector which can increase the light receiving surface, increase the light absorption of graphene and avoidthe damage to the graphene in the transfer process. The photoelectric detector comprises a substrate, wherein an insulating layer, a growth layer and a graphene layer are sequentially arranged on thesubstrate from bottom to top; the substrate is provided with grooves which are distributed in an array mode and are sunken downwards; a first convex surface matched with the groove is arranged on theinsulating layer; a second convex surface is arranged on the growth layer; a third convex surface is arranged on the graphene layer; an antireflection layer is arranged on the inner wall of the innergroove of the third convex surface of the graphene layer; and a wave-shaped interdigital high work function electrode and a wave-shaped interdigital low work function electrode are respectively arranged at two sides of the inner groove of the third convex surface on the graphene layer. The photoelectric detector is small in size, high in integration level, is wide in recognition range and the like.

Description

technical field [0001] The invention relates to the fields of communication and sensors, in particular to a graphene-metal heterojunction photodetector with a concave array. Background technique [0002] It is well known that the principle of the photodetector is that the conductivity of the irradiated material is changed by radiation. Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. [0003] The current mainstream structure of graphene photodetectors is a planar structure, so the light receiving surface is small, and graphene absorbs less light, and the general graphene photodetectors transfer the prepared graphene to the detector On the substrate, graphene is therefore prone to damage ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/11
CPCH01L31/02363H01L31/11Y02P70/50
Inventor 李全福张祺朱小虎彭慧玲刘卫华宋辉李廷会刘林生汪海船黄瑞
Owner GUANGXI NORMAL UNIV
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