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Preparation method of rhenium disulfide optoelectronic material loaded with pollen carbon skeleton

A technology of rhenium disulfide and optoelectronic materials, which is applied in the field of bionic nanomaterials, can solve the problems of rhenium disulfide growth of pollen carbon skeleton, loose combination of skeleton and material, improper control of pollen carbonization conditions, etc., to reduce preparation cost, operation and maintenance Convenience, Inexpensive Effects

Active Publication Date: 2022-02-22
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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  • Claims
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Problems solved by technology

However, these previous methods have the problems of improper control of pollen carbonization conditions, resulting in damage to pollen morphology, low degree of carbonization resulting in excessive impurities, and insufficient bonding of the framework and materials.
Moreover, in the previously reported materials, there is no method for growing rhenium disulfide on the pollen carbon skeleton

Method used

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  • Preparation method of rhenium disulfide optoelectronic material loaded with pollen carbon skeleton
  • Preparation method of rhenium disulfide optoelectronic material loaded with pollen carbon skeleton
  • Preparation method of rhenium disulfide optoelectronic material loaded with pollen carbon skeleton

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Embodiment 1

[0041] Select unbroken rape bee pollen (other kinds of unbroken pollen can also be used, such as lotus pollen, peony pollen) 10g (Jiangxi Ganzhou Shicheng County Kanghuang Bee Industry Co., Ltd.), soak in 100ml absolute ethanol (AR, Chengdu Kelong Chemical Co., Ltd.) Products Co., Ltd.) was placed in a 250mL beaker, and then the mixture was subjected to ultrasonic treatment for 1 hour, with an ultrasonic power of 75W and a frequency of 40KHz, and then rinsed with deionized water for 3 times. Ethanol will penetrate the pollen shell and enter the core, and the surface of the pollen and the material in the core are dissolved and washed.

[0042] Then proceed to one of the three key steps in this implementation example: Measure 50mL of absolute ethanol and 50mL of formaldehyde solution (AR, 37-40%, Chengdu Kelong Chemical Co., Ltd.), mix well, add to the above steps to wash The pollen was stirred with a magnetic stirrer for 10 minutes, and then washed and filtered with deionized w...

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Abstract

The invention discloses a method for preparing rhenium disulfide supported and grown by pollen carbon skeleton. The preparation method of rhenium disulfide supported and grown by pollen carbon skeleton comprises: weighing pollen and ultrasonic cleaning in ethanol; formaldehyde repairing pollen morphology; concentrated sulfuric acid Pre-carbonized pollen; weighing the reaction precursor hydrothermal reaction synthesis product; product separation, drying and annealing. The pollen carbon skeleton prepared by the preparation method provided by the present invention supports the growth of rhenium disulfide, which has the advantages of compact and uniform appearance, layered porous, large specific surface area, and three-dimensional morphology structure. At the same time, the pollen carbon skeleton after carbonization has good electrical conductivity, Rhenium disulfide has the characteristics of good light absorption, so the material of the present invention has excellent photoelectric properties. The raw material pollen of the invention is cheap and easy to obtain, all raw materials are safe and non-toxic, environment-friendly and easy for industrialized production.

Description

technical field [0001] The invention belongs to the technical field of biomimetic nanometer materials, and in particular relates to a preparation method of rhenium disulfide optoelectronic material supported and grown by pollen carbon skeleton. Background technique [0002] Graphene material was first isolated in 2004 and won the Nobel Prize in 2010. Subsequently, the special two-dimensional structure of graphene makes it have excellent electrical conductivity, which has attracted much attention. However, the shortcoming of graphene's zero bandgap limits its application. Therefore, researchers focus on non-zero bandgap materials that also have two-dimensional structure characteristics, such as black scales, transition metal sulfides, transition metal carbides, etc. [0003] Recently, transition metal dichalcogenides (TMDs) have attracted extensive attention in the fields of electronics, optoelectronics, spintronics, valleytronics, and catalysis due to their special structu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/04B01J35/00B01J37/08B01J37/10
CPCB01J27/04B01J37/10B01J37/084B01J35/33
Inventor 张璋汪敏捷刘元武张颖李婧黄文添
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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