Image sensor and manufacturing method thereof

An image sensor and manufacturing method technology, applied in the direction of electric solid-state devices, semiconductor devices, radiation control devices, etc., can solve problems such as image quality degradation, achieve the effects of reducing premature saturation, improving image quality, and reducing the amount of incoming light

Inactive Publication Date: 2019-08-06
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a new method for the defect that the white pixel in the existing image sensor has high sensitivity and is saturated earlier than pixels of other colors, causing electrons to overflow into the adjacent photosensitive element, thereby causing image quality to decline. Image sensor structure and manufacturing method thereof, improving the imaging quality of the image sensor in dark light

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  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof

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Embodiment Construction

[0028] The following description provides specific application scenarios and requirements of this application, with the purpose of enabling those skilled in the art to make and use the content in this application. For those skilled in the art, various partial modifications to the disclosed embodiments are obvious, and the general principles defined herein can be applied to other embodiments and without departing from the spirit and scope of the present disclosure. application. Therefore, the present disclosure is not limited to the illustrated embodiment, but the widest scope consistent with the claims.

[0029] The technical solution of the present invention will be described in detail below in conjunction with embodiments and drawings.

[0030] Figure 1 to Figure 8 It is a schematic diagram of the structure corresponding to each step of the image sensor forming method in the embodiment of the present invention.

[0031] The manufacturing method of the image sensor of this embodim...

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Abstract

The application relates to the field of semiconductor device manufacturing, in particular to an image sensor and a manufacturing method thereof. The application provides an image sensor and a manufacturing method thereof. The image sensor comprises a semiconductor substrate which comprises more than one pixel region comprising a white pixel region, a first dielectric layer which is located on thesemiconductor substrate, a second dielectric layer which is located on the first dielectric layer, and a light reflection layer which is located in the second dielectric layer and corresponds to the white pixel region. The light reflection layer located above the white pixel region reflects part of white light, so that the light input of the photosensitive element can be reduced, the problem of early saturation of the white pixel region can be reduced, and the image quality of the image sensor can be improved.

Description

Technical field [0001] The present invention relates to the manufacturing field of semiconductor devices, in particular to an image sensor and a manufacturing method thereof. Background technique [0002] The image sensor is a device that converts optical images into electrical signals. With the development of the computer and communication industries, the demand for high-performance image sensors continues to grow. These high-performance image sensors are widely used in digital cameras, video recorders, personal communication systems (PCS), game consoles, security cameras, and medical micro cameras. Such various fields. [0003] Image sensors include two types, charge coupled device (CCD) sensors and CMOS image sensors (CMOS Image Sensors, CIS). Compared with CCD image sensors, CMOS image sensors have the advantages of high integration, low power consumption, and low production cost. [0004] In a traditional CMOS image sensor, the photodiode is located behind the circuit transis...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14629H01L27/14685
Inventor 沈新林王海宽洪波郭松辉林宗贤
Owner HUAIAN IMAGING DEVICE MFGR CORP
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