Display panel and manufacturing method thereof
A technology for a display panel and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices, etc., can solve the problems of many manufacturing processes, high production costs, and complex structures of oxide film thin-film transistors, and can simplify the film Layer structure, reduction of processes and effects of reduction in number
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Embodiment 1
[0041] The disclosed embodiment provides a display panel, which is combined with Figure 1 to Figure 2 Describe in detail.
[0042] like figure 1 as shown, figure 1 A schematic cross-sectional structure diagram of the display panel 100 provided by an embodiment of the present disclosure. The display panel 100 includes a substrate 110 , source and drain electrodes 120 , a light shielding layer 130 , a dielectric layer 140 and an oxide semiconductor layer 150 .
[0043] In this embodiment, the source-drain electrodes 120 are disposed on the substrate 110, the light-shielding layer 130 is disposed on the substrate 110, and the light-shielding layer 130 and the source-drain electrodes 120 are disposed on the same layer. . The dielectric layer 140 is disposed on the substrate 110 and covers the light shielding layer 130 and the source-drain electrodes 120, the dielectric layer 140 is provided with a first via hole 141 and a second via hole 142, the The first via hole 141 and t...
Embodiment 2
[0062] The disclosed embodiment also provides a manufacturing method of the display panel 200, which is combined with Figure 3 to Figure 9 Describe in detail. Described preparation method comprises:
[0063] Step S10, such as Figure 4 As shown, a substrate 210 is provided, a first metal layer is deposited and formed on the substrate 210 , and the first metal layer is patterned to form a source-drain electrode 220 and a light-shielding layer 230 .
[0064] In this embodiment, the first metal layer is a laminated structure of molybdenum and copper or a laminated structure of aluminum and molybdenum.
[0065] Step S20: if Figure 5 As shown, a dielectric layer 240 is deposited and formed on the substrate 210, the source-drain electrodes 220 and the light-shielding layer 230, and the dielectric layer 240 is etched to form a first via hole 241 and a second via hole 242.
[0066] In this embodiment, the material of the dielectric layer 240 includes SiOx, and in some embodimen...
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