Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method of simulating EEPROM with atomic operation characteristics by using flash memory

An atomic operation and flash memory technology, applied in the field of storage systems and EEPROM, can solve the problems of no atomic operation characteristics, inability to know whether the read data is credible, storage content confusion, etc., to improve reliability, reduce hardware costs, reduce The effect of software cost

Inactive Publication Date: 2019-07-23
小华半导体有限公司
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the existing scheme of using flash memory to emulate EEPROM does not have atomic operation characteristics, that is to say, if it is interrupted (such as power failure) when writing data, the storage content will be confused (for example, only a part of the data is written, but the specific Which part is unknown); if the data in the storage area is destroyed due to misoperation, it is impossible to know whether the read data is credible when reading

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method of simulating EEPROM with atomic operation characteristics by using flash memory
  • A method of simulating EEPROM with atomic operation characteristics by using flash memory
  • A method of simulating EEPROM with atomic operation characteristics by using flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] It should be noted that components in the various figures may be shown exaggerated for the purpose of illustration and are not necessarily true to scale. In the various figures, identical or functionally identical components are assigned the same reference symbols.

[0055] In the present invention, unless otherwise specified, "arranged on", "arranged on" and "arranged on" do not exclude the presence of intermediates between the two. In addition, "arranged on or above" only means the relative positional relationship between two parts, and under certain circumstances, such as after the product direction is reversed, it can also be converted to "arranged under or below", and vice versa Of course.

[0056] In the present invention, each embodiment is only intended to illustrate the solutions of the present invention, and should not be construed as limiting.

[0057] In the present invention, unless otherwise specified, the quantifiers "a" and "an" do not exclude the scen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for simulating an EEPROM (electrically erasable programmable read-only memory) with the atomic operation characteristics by using a flash memory. The method comprisesthe following steps of providing one or more pages of the flash memory as a first page; providing one or more pages of the flash memory as the second pages; determining the first page as a working page; carrying out a reading operation and / or a writing operation on the working page, wherein the reading operation and / or the writing operation are / is set to enable the data read each time to be the successfully written data; after the working page is fully written, formatting the second page; and determining the second page as the working page. The invention also relates to a storage system. Through the method, the storage operation of the EEPROM can be better simulated, so that the hardware cost and the software cost of a product are reduced.

Description

technical field [0001] The present invention generally relates to the field of embedded software, and in particular relates to a method for simulating EEPROM with atomic operation characteristics by using flash memory. In addition, the invention also relates to a storage system. Background technique [0002] In embedded development, EEPROM is used in many product scenarios to store non-volatile data that needs to be saved in the application. However, currently mainstream microprocessors such as MCUs have large flash memory (flash) space, but no EEPROM, because if an additional EEPROM device is added, the cost of the product will be significantly increased. Therefore, many applications will use embedded software to use flash memory to emulate EEPROM to meet product requirements. [0003] However, the existing scheme of using flash memory to emulate EEPROM does not have atomic operation characteristics, that is to say, if it is interrupted (such as power failure) when writin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0644G06F3/0664G06F3/0679
Inventor 夏成君
Owner 小华半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com