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QLED device and preparation method thereof

A device and quantum dot technology, applied in the field of quantum dot light-emitting devices, can solve the problems of low luminous efficiency of QLED devices, achieve the effect of improving luminous efficiency and brightness, and realizing performance

Active Publication Date: 2019-07-05
TCL CORPORATION
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Problems solved by technology

[0006] In view of the above deficiencies in the prior art, the object of the present invention is to provide a QLED device and a preparation method thereof, aiming at solving the problem of low luminous efficiency of the existing QLED device

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Embodiment Construction

[0025] The present invention provides a QLED device and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention more clear and definite, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] The present invention provides a QLED device, comprising a cathode and an anode, and an electron transport layer and a quantum dot light-emitting layer arranged between the cathode and the anode, wherein,

[0027] The electron transport layer is an array of II-IV semiconductor nanorods, and the array of II-IV semiconductor nanorods is vertically arranged relative to the surface of the cathode;

[0028] The quantum dot light-emitting layer material is quantum dot, and the quantum dot is grown on the top of II-IV semiconductor nanorod.

[0029] There are various ...

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Abstract

The invention discloses a QLED device and a preparation method thereof, and the QLED device comprises a cathode, an anode, and an electron transmission layer and a quantum dot light-emitting layer which are both arranged between the cathode and the anode. The electron transmission layer is a II-IV group semiconductor nanorod array which is vertically arranged relative to the surface of the cathode. The material of the quantum dot light-emitting layer is quantum dots, and the quantum dots grow at the tops of the II-IV group semiconductor nanorods. Light generated by the quantum dot light-emitting layer can pass in the axial direction of the II-IV group semiconductor nanorods in a more concentrated and lower-loss manner, and light is emitted from the cathode of the device, so that the luminous efficiency and the brightness of the device are greatly improved. According to the invention, the distances between the quantum dots with different particle sizes can be indirectly and accurately controlled through the control of the diameter of the II-IV group semiconductor nanorods and the distance between the adjacent nanorods in the array, thereby achieving the performance optimization of the QLED device.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a QLED device and a preparation method thereof. Background technique [0002] Quantum dot electroluminescence is a new type of solid-state lighting technology. It has the advantages of low cost, light weight, fast response speed, and high color saturation. It has broad development prospects and has become one of the important research directions for the new generation of LED lighting. [0003] The quantum dot light-emitting device (QLED device) currently studied generally includes a first electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a second electrode. According to the relative positions of the first electrode and the second electrode, the QLED structure can be divided into a positive structure and an inverted structure. The hole injection layer and the hole transport layer are use...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/005H01L33/0083H01L33/06
Inventor 李泽伟曹蔚然
Owner TCL CORPORATION
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