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Unit structure of polarization insensitive topological insulator electromagnetically-induced transparent material

A technology of electromagnetically induced transparent and topological insulators, applied in electrical components, antennas, etc., to achieve the effect of small size, simple structure and thin thickness

Active Publication Date: 2019-06-14
HUANGSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are few reports on the realization of EIT in topological insulating materials

Method used

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  • Unit structure of polarization insensitive topological insulator electromagnetically-induced transparent material
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  • Unit structure of polarization insensitive topological insulator electromagnetically-induced transparent material

Examples

Experimental program
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Effect test

Embodiment 1

[0031] In this embodiment, the side length l1 of the topological insulator layer is 10 μm, the length l of the dielectric layer is 30 μm, the width w is 20 μm, the thickness d1 of the dielectric layer is 2 μm, the material of the dielectric layer is sapphire, and the thickness d2 of the topological insulator layer is 0.1 μm , the topological insulator layer chooses bismuth selenide as the sample for experiments.

[0032] Such as image 3 As shown, the response to the electromagnetic waves loaded with TE mode and TM mode in the present invention.

[0033] The working environment temperature of the topological insulator is 300K. When the electromagnetic wave is selected as TE mode, the transparent frequency point is 1.3940THz, and the transmittance is 0.9249. When the electromagnetic wave is selected as TM mode, the transparent frequency point is 1.3940THz, and the transmittance is 0.9196. That is, regardless of whether the electromagnetic wave is in TE or TM mode, it can produ...

Embodiment 2

[0035] Adopt topological insulator layer side length l1 to be 16 μ m, the sample that other conditions are identical with embodiment 1 conditions, Figure 4 and Figure 5 The effect of ambient temperature on the electromagnetically induced transparency effect is demonstrated.

[0036] Such as Figure 4 As shown, in the TE mode, when the working environment temperature is 5, 77, 200 and 300K, the electromagnetic induced transparency effect exists. Specifically, when the working environment temperature is 5K, the transparent frequency point is 1.087THz, the transmittance is 0.9623, the frequency of the low-frequency transmission valley is 0.8729THz, the transmittance is 0.4161, and the frequency of the high-frequency transmission valley is 2.0816THz. The transmittance is 0.6805; when the working environment temperature is 77K, the transparent frequency point is 1.1217THz, the transmittance is 0.9596, the frequency of the low-frequency transmission valley is 0.9084THz, the tran...

Embodiment 3

[0041] Taking the working environment temperature as 77K as an example, the samples in Example 2 are loaded with different incident angles and different modes of electromagnetic waves in response.

[0042] Figure 7 It is the response of the electromagnetic wave under different incident angles of the TE mode for the present invention. When the angle of the incident electromagnetic wave is 0 degrees, the transparent frequency point is 1.0861THz, and the transmittance is 0.9673. When the angle of the incident electromagnetic wave is 30 degrees, the transparent frequency point is 1.0861THz, and the transmittance is 0.9634. When the angle of the incident electromagnetic wave is At 60 degrees, the transparent frequency point is 1.0861THz, and the transmittance is 0.9397. When the incident electromagnetic wave angle is 85 degrees, the transparent frequency point is 1.1099THz, and the transmittance is 0.6123, that is, the electromagnetic wave incident angle reaches 60 degrees, and th...

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Abstract

The invention relates to a unit structure of a tunable graphene artificial surface polarization insensitive topological insulator electromagnetically-induced transparent material. The structure comprises a dielectric layer and a topological insulator body; and the front side of the dielectric layer is coated with the topological insulator body. The topological insulator body is of a square shape,the dielectric layer is of a rectangle shape, and a material of the topological insulator body is bismuth selenide. The unit structure has a polarization insensitive electromagnetically-induced transparent phenomenon, and is simple in structure, simple in machining process, small in size and applicable to preparation of a micro device.

Description

technical field [0001] The invention relates to the technical field of two-dimensional materials, in particular to a unit structure of a polarization-insensitive topological insulator electromagnetically induced transparent material. Background technique [0002] The electromagnetic induction transparency effect is a quantum interference effect between the electromagnetic field and the atomic energy level system during the interaction between the material medium and the electromagnetic field. This effect can lead to a transparent peak in the transmission spectrum at the resonant excitation frequency of the transmission spectrum. However, rigorous experimental conditions in atomic systems, such as coherent high-intensity pumping and cryogenic temperatures, greatly limit its performance and further research. In order to break through this limitation, people have paid attention to the analogy of the EIT effect in metamaterials in recent years, thereby extending the limitation ...

Claims

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Application Information

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IPC IPC(8): H01Q15/00
Inventor 宁仁霞焦铮杨天龙李德凯鲍婕陈珍海
Owner HUANGSHAN UNIV
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