A Ni-based metal catalyst and method for preparing special diamond for IC chip polishing pad dressing by utilizing the catalyst

A base metal and diamond technology, which is applied in the field of artificial crystal synthesis, can solve problems affecting processing accuracy and service life, low trimming cleanliness, and affecting polishing effects, etc., to achieve rapid development, improve processing quality, and easy temperature control Effect

Active Publication Date: 2021-01-22
HENAN POWER NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The surface of the diamond wheel is inlaid with diamond particles, and its crystal form and distribution affect the polishing effect. The diamond used in conventional dressers has a nearly circular six-octahedron crystal form, uneven distribution, poor self-sharpening, and low dressing clarity. ; Afterwards, the polycrystalline diamond is etched into a pointed cone-shaped diamond disc, and the trimming effect is improved. However, during the processing of this material, it is easy to cause excessive stress on the tip, which affects its processing accuracy and service life. The cone-shaped diamond single crystal is made into a diamond wheel, but it needs to be selected from a large number of conventional diamonds, and the yield is lower than 1%.

Method used

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  • A Ni-based metal catalyst and method for preparing special diamond for IC chip polishing pad dressing by utilizing the catalyst
  • A Ni-based metal catalyst and method for preparing special diamond for IC chip polishing pad dressing by utilizing the catalyst
  • A Ni-based metal catalyst and method for preparing special diamond for IC chip polishing pad dressing by utilizing the catalyst

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The preparation method of Ni-based metal catalyst of the present invention:

[0048] a, expressed in weight percent, the alloy composition of the Ni-based metal catalyst consists of Co 5%, Fe 10%, Al 0.1%, La 0.5%, Cu 0.5%, B 4 C 0.005%, the balance is nickel;

[0049] b. Put the material prepared in step a into an intermediate frequency furnace, and smelt it under the protection of argon. The smelting temperature is 1550° C., and the smelting time is 20 minutes. After smelting, an alloy liquid is obtained;

[0050] c, using 5.0MPa high-pressure gas to atomize the alloy liquid obtained by smelting in step b into powder to obtain catalyst powder;

[0051] d. Sieve the catalyst powder obtained in step c, select a powdered alloy with a particle size of 5-15 μm, and obtain a Ni-based metal catalyst for synthesizing special diamond. The electron microscope picture of gained Ni-based metal catalyst is shown in the attached figure 1 .

Embodiment 2

[0053] Utilize the Ni-based metal catalyst gained in embodiment 1 to prepare the method for special diamond for IC chip polishing pad finishing, detailed steps are as follows:

[0054] (1) Preparation of synthetic column:

[0055] Take the Ni-based metal catalyst with a particle size of 5-15 μm obtained in Example 1 and the natural graphite (impurity content-3 High vacuum reduction under the condition of Pa for 12 hours, after the reduction is completed, the temperature is naturally cooled to room temperature, and then vacuum packaged for later use;

[0056] (2) Assembly of synthetic blocks:

[0057] The periphery of the synthetic column obtained in step (1) is provided with zirconia insulating cups, heating carbon tubes, sodium chloride pressure transmission tubes and composite pyrophyllite blocks sequentially from the inside to the outside according to the structure of conventional synthetic blocks, and the upper and lower ends are symmetrically arranged with heating sheets ...

Embodiment 3

[0065] The preparation method of Ni-based metal catalyst of the present invention:

[0066] a. Expressed in weight percent, the alloy formulation of the Ni-based metal catalyst consists of Co 10%, Fe 15%, Al 0.5%, La 1.0%, Cu 1.0%, B 4 C 0.01%, the balance is nickel.

[0067] b. Put the material prepared in step a into the intermediate frequency furnace, and melt it under the protection of argon. The melting temperature is 1580 ° C, and the melting time is 18 minutes. After melting, the alloy liquid is obtained;

[0068] c, using 6.0MPa high-pressure gas to atomize the alloy liquid obtained by smelting in step b into powder to obtain catalyst powder;

[0069] d. Sieve the catalyst powder obtained in step c, select a powdered alloy with a particle size of 5-20 μm, and obtain a Ni-based metal catalyst for synthesizing special diamond.

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Abstract

The invention discloses a Ni-based metal catalyst and a method for using the catalyst to prepare an IC chip polishing pad dressing special diamond. The Ni-based metal catalyst is prepared by using Co,Fe, Al, La, Cu, B4C and nickel. Three-dimensional mixing, isostatic pressing molding, granulating and pressing on the metal catalyst and high purity graphite in sequence to obtain a cylindrical composite column; after high vacuum reduction treatment is carried out on the composite column, a synthetic block is assembled; after being dried, the synthetic block is put into a high temperature press to be synthesized into diamond at high temperature and high pressure; and the obtained special diamond synthetic block is electrolyzed and purified to obtain the IC chip polishing pad dressing pointedcone-shaped special diamond. The synthesized diamond containing pointed cone-shaped crystal forms has the advantages of consistent crystal form, complete crystal surface, yellow color and high thermalshock value; IC chip super precision polishing and processing requirements can be effectively satisfied, the IC chip processing machining efficiency can be greatly enhanced, and the IC chip processing quality can be greatly improved.

Description

[0001] 1. Technical field: [0002] The invention relates to the technical field of artificial crystal synthesis, in particular to a Ni-based metal catalyst and a method for preparing special diamond for IC chip polishing pad dressing by using the catalyst. [0003] 2. Technical background: [0004] With the development of science and technology, IC chips have become an indispensable core component for intelligent control in all walks of life. How to improve the processing accuracy of IC chips is an important factor restricting the development of my country's IC industry. In the process of IC chip processing, CMP (chemical mechanical polishing) processing is an important part of IC chip precision processing. A certain pressure is used to perform rotary polishing on the polishing pad added with the polishing liquid to obtain higher surface flatness and processing accuracy. During the CMP processing of IC chips, the aging of the polishing pad will reduce the transmission speed of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C19/03C22C1/04C22C1/10C30B1/12C30B29/04C30B29/66
Inventor 邵增明张存升
Owner HENAN POWER NEW MATERIAL
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