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Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor performance

Active Publication Date: 2019-05-28
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the prior art, the performance of semiconductor devices composed of both planar MOS transistors and fin field effect transistors is poor.

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

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Experimental program
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Embodiment Construction

[0031] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.

[0032] Figure 1 to Figure 3 It is a structural schematic diagram of the formation process of a semiconductor device.

[0033] refer to figure 1 , providing a substrate with a gate structure 110 on the substrate; grooves 120 are respectively formed in the substrate on both sides of the gate structure 110 .

[0034] refer to figure 2 , forming a seed layer 130 on the inner wall of the groove 120 .

[0035] refer to image 3 , in the groove 120 (refer to figure 2 ) to form the source drain body layer 140 located on the surface of the seed layer 130 .

[0036] The forming process of the groove 120 includes an anisotropic dry etching process. The etching directionality of the anisotropic dry etching process is strong. After the groove 120 is formed, the transition from the sidewall surface of the groove 120 to the bottom surface of the groove 120 is relatively rap...

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Abstract

The invention discloses a semiconductor device and a forming method thereof. The method comprises the steps: providing a substrate which is provided with a gate structure; respectively forming initialgrooves in the substrate at two sides of the gate structure; carrying out surface smoothing treatment on the inner walls of the initial grooves to enable the initial grooves to form grooves, and enabling a corner between the bottom surface and the side wall of each groove to be a round corner; forming a seed layer on the inner wall of each groove, wherein each seed layer covers the whole inner wall of the corresponding groove; and forming a source-drain body layer on the surface of each seed layer in the groove. The method improves the performance of the semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, a source region located in the semiconductor substrate on one side of the gate structure, and a drain region located in the semiconductor substrate on the other side of the gate structure. The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current through the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resultin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/417H01L21/768
CPCH01L29/165H01L29/66636H01L29/7848H01L21/02532H01L21/0245H01L21/0262H01L21/02579H01L21/02639H01L21/02645H01L29/785H01L29/66795H01L21/3247H01L21/02529H01L29/0847H01L29/1608H01L29/161H01L29/7851
Inventor 刘轶群何永根
Owner SEMICON MFG INT (SHANGHAI) CORP
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