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Graphene-based photodetector

A photodetector and graphene technology, applied in the field of photoelectric detection, can solve the problems of high preparation requirements, complex structure, slow photoresponse speed, etc., and achieve the effects of high sensitivity, improved sensitivity, and wide spectrum detection range

Inactive Publication Date: 2019-05-14
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But there are also some problems. Since the light absorption mainly comes from quantum dots instead of graphene, the detection band is limited to the photoresponse band of quantum dots.
CN103633183A proposed InSb quantum dot-modified graphene mid-to-far infrared photodetector, but there is also the problem that the detection band is limited by quantum dots
[Yao Y, Shankar R, RauterP, et al..High-responsivity mid-infrared graphene detectors with antenna-enhanced photocarrier generation and collection[J].Nano Lett,2014,14(7):3749-3754] proposed a A graphene infrared detector modified with Au plasmonic nanostructures, the detector includes many orderly arranged end-to-end coupled Au plasmonic nanostructures, and the structure can simultaneously enhance the light absorption ability and photogenerated current carrying capacity of the detector sub-collection efficiency, however, the photoresponsivity-enhanced wavelength band is limited to the resonant wavelength of the plasmonic nanostructure
Not conducive to the detection of a wide spectral range
[Qiao H, Yuan J, Xu Z Q, et al..Broadband photodetectors based on graphene / Bi2Te3 heterostructure[J].ACS Nano,2015,9(2):1886-1894] proposed a Bi 2 Te 3 Gapless van der Waals heterojunction photodetectors with graphene using Bi 2 Te 3 The narrow bandgap achieves high responsivity detection for near-infrared and short-wave infrared, but the detection range is not wider, which is not conducive to practical applications
[ZhangY Z, Liu T, Meng B, et al..Broadband high photoresponse from pure monolayergraphene photodetector[J].Nat.Commun,2013,4:1811-1821] proposed a method to introduce electron capture on monolayer graphene state and quantize graphene in size to open the photodetector of graphene bandgap, and realize the light detection with wide spectrum and high responsivity from visible light (532nm) to long-wave infrared (10mm), but the detector manufacturing process The defect state introduced by chemical etching will lead to slow photoresponse, which needs further improvement
CN106206833A proposes a room-temperature infrared detector based on graphene nanowall / silicon, but because the detector cannot realize ultra-high responsivity
CN103383976B proposes a graphene-enhanced InGaAs infrared detector, which has a complex structure, high preparation requirements, and poor repeatability
[Cakmakyapan S, Lu P, Navabi A and Jarrahi M. Gold-patched graphenenano-stripes for high-responsivity and ultrafast photodetection from the visible to infrared regime[J]. Light: Science & Applications, 2018, 7:20] proposed a gold-patched Nanostructure-modified graphene nanoribbon photodetectors, but the contact area between gold comb teeth and graphene is limited, which is not conducive to further increasing the photocurrent

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Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0020] It should be noted that like numerals and let...

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Abstract

Embodiments of the invention provide a graphene-based photodetector comprising a graphene nano-belt, a positive electrode, a negative electrode, a positive electrode nano-wire, a negative electrode nano-wire, a positive nano-comb and a negative nano-comb, wherein the positive nano-comb and the negative nano-comb are lapped on the graphene nano-belt, the positive nano-comb is connected to the positive electrode through the positive electrode nano-wire, the negative nano-comb is connected to the negative electrode through the negative electrode nano-wire, each of the positive nano-comb or the negative nano-comb comprises a comb end and a comb body, and the comb end has a cross-sectional width greater than that of the comb body, thereby realizing higher sensitivity and wider spectrum detection range.

Description

technical field [0001] The invention relates to the field of photoelectric detection, in particular to a graphene-based nanoscale photodetector. Background technique [0002] Since infrared radiation has a wavelength between visible light and microwaves, it cannot be detected by the human eye. Therefore, the use of infrared detectors can realize long-distance thermal state image imaging and temperature measurement of the target, and intelligent analysis and judgment can be carried out. In the fields of industrial automatic control, remote sensing imaging, medical diagnosis, environmental monitoring, optical communication, etc., infrared photoelectric detection technology is the core technology. In addition, with the rapid development of radio technology and radar detection technology, electronic and communication equipment is developing towards high sensitivity, high frequency and diversification, which may cause the electromagnetic radiation of military electronic equipmen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/028H01L31/09H01L31/18
CPCY02P70/50
Inventor 宁提纲贺雪晴裴丽郑晶晶李晶王创业许建
Owner BEIJING JIAOTONG UNIV
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