Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photodetector based on tin selenide/silicon heterojunction, and preparation method thereof

A photodetector and silicon heterojunction technology, applied in the field of photodetection, can solve problems such as hindering the application of photodetectors, and achieve the effects of remarkable photoresponse performance, simple preparation method and low cost

Inactive Publication Date: 2019-05-10
CHINA UNIV OF PETROLEUM (EAST CHINA)
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the photodetectors reported so far need to be powered, which seriously hinders the application of photodetectors in real life.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photodetector based on tin selenide/silicon heterojunction, and preparation method thereof
  • Photodetector based on tin selenide/silicon heterojunction, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention utilizes the magnetron sputtering method to deposit a SnSe thin film layer on the Si single crystal substrate to obtain a SnSe / Si heterojunction, and deposits the metal Pd front electrode through the DC magnetron sputtering technology and presses the metal In electrode and connects the metal wire, Form the device. When exposed to light conditions, due to the photoelectric effect and the existence of the built-in electric field, the device can exhibit obvious response performance to light when the applied voltage is 0 volts.

[0024] The present invention will be described in detail below in conjunction with the embodiments and accompanying drawings.

[0025] The invention is a photodetector based on tin selenide / silicon heterojunction, comprising a SnSe thin film layer and a Si single crystal substrate, the Si single crystal substrate is used as the carrier of the SnSe thin film layer, and the SnSe thin film layer is arranged on the surface of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention belongs to the technical field of photodetection, and particularly relates to a photodetector. The photodetector comprises a metal In point electrode, a metal Pd front electrode,a SnSe thin film layer, a Si single crystal substrate and a metal In back electrode arranged in the order from top to bottom. The SnSe thin film layer is prepared by using a magnetron sputtering method. The test results show that the prepared thin film device presents good self-driven photodetection performance and has the advantages of stable performance and the like.

Description

technical field [0001] The invention belongs to the technical field of photodetection, and in particular relates to a photodetector and a preparation method thereof. Background technique [0002] A photodetector is an electronic device that can convert optical signals into electrical signals, and has been widely used in military, biological imaging, nondestructive testing, communications, environmental monitoring and other fields. However, most of the photodetectors reported so far need to be powered, which seriously hinders the application of photodetectors in real life. [Small,2017,13(45):1701687]The self-driven photodetector can not only respond to the incident light, but also absorb the incident light to provide energy for its own work, so the development of the self-driven photodetector will help promote the development of photoelectric Detectors are changing towards miniaturization, intelligence and energy saving. One of the core units of self-driven photodetection t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/109H01L31/0336H01L31/18
CPCY02P70/50
Inventor 凌翠翠郭天超赵琳侯志栋
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com