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High-precision shadow-mask-deposition system and method therefor

A mask and shadow-shading technology, which is applied in the field of thin film deposition based on evaporation, can solve the problems of reducing display brightness and unsatisfactory, and achieve the effect of reducing feathering

Active Publication Date: 2019-04-16
埃马金公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these color filters absorb up to 80% of the emitted light, which significantly reduces display brightness, again requiring operation at higher than desired drive currents
[0010] In the prior art, there remains an unmet need for a process suitable for direct patterning of high-resolution material patterns onto substrates

Method used

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  • High-precision shadow-mask-deposition system and method therefor
  • High-precision shadow-mask-deposition system and method therefor
  • High-precision shadow-mask-deposition system and method therefor

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Embodiment Construction

[0027] Figure 1 depicts a schematic diagram of a cross-section of the main features of a direct patterned deposition system according to the prior art. System 100 is a conventional evaporation system that deposits a desired pattern of material on a substrate by evaporating material through a shadow mask positioned in front of the substrate. System 100 includes a source 104 and a shadow mask 106 arranged within a low pressure vacuum chamber (not shown).

[0028] Substrate 102 is a glass substrate suitable for forming an active matrix organic light emitting diode (AMOLED) display. Substrate 102 includes surface 114 defining plane 108 and vertical axis 110 . Vertical axis 110 is normal to plane 108 . Surface 114 includes a plurality of deposition sites G for receiving green light emitting material, a plurality of deposition sites B for receiving blue light emitting material, and a plurality of deposition sites R for receiving red light emitting material. The deposition sites a...

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PUM

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Abstract

A direct-deposition system capable of forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through an aperture pattern of a shadowmask to deposit on the substrate in the desired pattern. Prior to reaching the shadow mask, the vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. As a result, the vaporized atoms that pass through the shadow mask exhibit little or no lateral spread (i.e., feathering) after passing through its apertures and the material deposits on the substrate in a pattern that has very high fidelity with the aperture pattern of the shadow mask. The present invention, therefore, mitigates the need for relatively large space between regions of deposited material normally required in the prior art, thereby enabling high-resolution patterning.

Description

[0001] Statement of related cases [0002] This case claims priority to U.S. Provisional Patent Application Serial No. 62 / 340,793 (Attorney Docket: 6494-208PR1), filed May 24, 2016, which is incorporated herein by reference. technical field [0003] The present invention relates generally to thin film deposition, and more particularly, the present invention relates to evaporation based thin film deposition. Background technique [0004] Shadow mask based deposition is the process of depositing material onto the surface of a substrate such that the deposited material is patterned as desired during the deposition process itself. This is often referred to as "directly patterning" the patterned layer of the material. [0005] In a typical shadow mask deposition process, the desired material is vaporized at a source some distance from the substrate. As the vaporized atoms of the material travel towards the substrate, they must pass through a shadow mask positioned directly in ...

Claims

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Application Information

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IPC IPC(8): C23C14/24C23C14/54
CPCC23C14/042C23C14/24H10K71/166H10K71/00
Inventor A·P·高希F·瓦然M·阿南丹E·多诺霍I·I·哈尤林T·阿里K·泰斯
Owner 埃马金公司
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