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Rapid scanning exposure method based on DMD horizontalized state

A technology of fast scanning and exposure methods, which is applied in microlithography exposure equipment, photolithography exposure devices, optics, etc., can solve the problems that affect the productivity of scanning exposure systems, affect the scanning speed, etc., and increase the scanning step length , Improve scanning speed and productivity, and reduce the effect of line width difference

Active Publication Date: 2019-03-08
HEFEI CHIP FOUND MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The line width difference of the lines in different directions limits the increase of the scanning step size, and a smaller scanning step size requires a higher DMD refresh frequency, which affects the improvement of the scanning speed and ultimately affects the performance of the scanning exposure system. Increased production capacity

Method used

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  • Rapid scanning exposure method based on DMD horizontalized state
  • Rapid scanning exposure method based on DMD horizontalized state
  • Rapid scanning exposure method based on DMD horizontalized state

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Embodiment Construction

[0028] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments.

[0029] Such as figure 1 As shown, the fast scanning exposure method based on the DMD flat state described in this embodiment includes the following steps:

[0030] S100, the precision platform moves at a constant speed, and generates pulses according to a certain scanning step;

[0031] S200 and DMD refresh the graphics according to the pulse triggered by the precision platform;

[0032] S300. Leveling the DMD micromirror through a leveling command between pulses triggered by the precision platform.

[0033] The specific embodiment of the present...

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Abstract

The invention relates to a rapid scanning exposure method based on a DMD horizontalized state and can be used for solving the technical problems that 'smear' in scanning type exposure influences increase of scanning step size and then increase of scanning speed and capacity of a scanning type exposure system is influenced. The rapid scanning exposure method comprises the following steps: S100, arranging a precise platform moving at a constant speed in an exposure process, and generating pulses according to a set scanning step size; S200, refreshing a graphic by a DMD micromirror according to pulses triggered by the precise platform, so as to perform modulation; and S300, between the pulses triggered by the precise platform, horizontalizing the DMD micromirror by virtue of a horizontalization command. The rapid scanning exposure method based on the DMD horizontalized state reduces influence of the 'smear' on line width difference of lines with the same line width and in different directions by horizontalizing the DMD micromirror between the two pulses triggered by the precise platform, and the scanning step size can be greatly increased and DMD refresh rate requirement can be reduced, so that scanning speed and capacity are increased.

Description

technical field [0001] The invention relates to the technical field of laser maskless lithography, in particular to a fast scanning exposure method based on a flat state of a DMD. Background technique [0002] Based on laser maskless lithography, also known as laser direct imaging (Laser Direct Imaging, LDI), it is a technology that uses a spatial light modulator (Spatial Light Modulator, SLM) to transfer the exposure pattern to the photoresist for imaging. [0003] As a kind of spatial light modulator, digital micromirror DMD (Digital Micro mirror Device) is widely used in maskless lithography system. It is an array of micromirrors, whose micromirrors are independently controlled by the CMOS memory below them, and correspond to a pixel in the image. When the data in the CMOS memory is 1, the micromirror deflects +12 degrees, corresponding to the open state; when the data in the CMOS memory is 0, the micromirror deflects -12 degrees, corresponding to the off state. In addi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/2053G03F7/704G03F7/2057
Inventor 卞洪飞赵美云
Owner HEFEI CHIP FOUND MICROELECTRONICS EQUIP CO LTD
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