Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Device and process for purification and preparation of polysilicon by controlling heating temperature field

A technology of polysilicon and temperature field, applied in the direction of polycrystalline material growth, silicon compound, crystal growth, etc., can solve the problems of discontinuous control of temperature field, unfavorable growth of columnar crystals, etc., achieve good cooling effect, ensure cooling effect, and ensure flat straight or slightly convex effect

Active Publication Date: 2020-03-20
CHENGDU SILICON TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: the temperature field control of the existing power drop method is discontinuous, and the thermal field is a stepwise mutation from top to bottom, which is not conducive to the growth of columnar crystals. The present invention provides a controlled heating temperature solution to solve the above problems. Field purification equipment and process for preparing polysilicon

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and process for purification and preparation of polysilicon by controlling heating temperature field
  • Device and process for purification and preparation of polysilicon by controlling heating temperature field
  • Device and process for purification and preparation of polysilicon by controlling heating temperature field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] This embodiment provides a device for purifying and preparing polysilicon by controlling a heating temperature field, including a furnace body 2, wherein a heat insulating plate 3 is provided in the furnace body 2, and a through hole is formed in the middle of the heat insulating plate 3 for accommodating the cooling plate 1, The crucible 4 is placed on the cooling plate 1. The crucible 4 is provided with a heating induction coil 5 and a heat preservation cylinder 6. The heat preservation cylinder 6 is provided with an upper section graphite heating ring 7, a middle section graphite heating ring 8 and a lower section graphite heating ring 9, and the upper section is provided with a graphite heating ring 7. A connecting ring 10 is provided between the graphite heating ring 7 and the middle graphite heating ring 8, and between the middle graphite heating ring 8 and the lower graphite heating ring 9. The connecting ring 10 adopts a thermal conductivity of 10 to 50 W / m·k. Ma...

Embodiment 2

[0051] Further improvement is made on the basis of Embodiment 1. The connecting ring is made of zirconia ceramics or alumina ceramics, and a plurality of through holes 11 are provided on the side walls of the connecting ring 10 . The inner bottom of the heat preservation cylinder 6 is provided with a limit ring plate 12, and the inner diameter of the limit ring plate 12 is smaller than the inner diameter of the upper graphite heating ring 7, the middle graphite heating ring 8, the lower graphite heating ring 9 and the connecting ring 10.

Embodiment 3

[0053] Further improvement on the basis of Embodiment 2, the cooling plate 1 includes a cylindrical casing 101, and a gas distribution sleeve I102 and a gas distribution sleeve P103 with a coaxial line are arranged in the casing 101. The sleeve П103 is sleeved outside the gas distribution sleeve I102; the outer diameter of the gas distribution sleeve П103 is smaller than the inner diameter of the housing 101, and the inner diameter of the gas distribution sleeve П103 is larger than the gas distribution sleeve I102 The outer diameter of;

[0054] The inside of the gas distribution sleeve I102 and the side wall of the gas distribution sleeve П103 are annular hollow chamber structures, and the inner sidewall of the gas distribution sleeve П103 and the outer sidewall of the gas distribution sleeve I102 are provided with ventilation holes 104;

[0055] The bottom of the casing 101 is provided with an annular air inlet chamber 105 along the circumferential direction, the air inlet ch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a device for controlling a heating temperature field to purify and prepare polycrystalline silicon. The furnace body is provided therein with a heat insulation plate, a coolingplate, a crucible, a heating induction ring and a heat preservation tube. The heat preservation tube is provided therein with an upper graphite heating ring, a middle graphite heating ring and a lower graphite heating ring, connection rings are arranged between the upper graphite heating ring and the middle graphite heating ring, and between the middle graphite heating ring and the lower graphiteheating ring, respectively, and the connection rings are made from a high temperature resistant material with heat conduction coefficient of 10-50 W / m.k. A purification process comprises the steps: introducing a cooling gas into a cooling plate; introducing an inert gas into a furnace body, and meanwhile discharging through an exhaust pipe provided at the top of the furnace body to ensure a certain gas pressure existing in the furnace body; and controlling the upper graphite heating ring, the middle graphite heating ring, and the lower graphite heating ring to cool according to a certain procedure. The device and process for controlling heating temperature field to purify and prepare polycrystalline silicon facilitates the formation of a uniform temperature gradient, being favorable for crystal growth, and can effectively prevent the stepwise sudden change of a stepwise heat field from top down.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a device and a process for purifying and preparing polysilicon by controlling a heating temperature field. Background technique [0002] At present, solar energy has become the most concerned green energy. Polycrystalline silicon is the most widely used solar cell material. Directional solidification is an effective metallurgical purification method to obtain solar-grade polycrystalline silicon materials. Directional solidification refers to the use of forced means during the solidification process to establish a temperature gradient in a specific direction in the solidified metal and the unsolidified metal melt, so that the melt solidifies in the opposite direction to the heat flow, and finally obtains columnar crystals with specific orientations. Technology. Directional solidification is an important method to study solidification theory and metal solidification laws, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B28/06C01B33/037
CPCC01B33/037C30B28/06C30B29/06
Inventor 羊实庹开正
Owner CHENGDU SILICON TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products