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A method and apparatus for obtaining a sub-SEE cross section of a device

A single-event effect and cross-section technology, applied in the field of microelectronics, can solve the problems of reducing cost and operation complexity, high cost, complicated operation, etc., and achieves the effect of reducing design cycle, facilitating engineering application, and less input parameters

Active Publication Date: 2019-01-15
BEIJING SHENGTAOPING TEST ENG TECH RES INST
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Problems solved by technology

[0008] The embodiment of the present invention provides a method and device for obtaining the neutron single event effect section of a device, which is used to solve the defects of high cost and complicated operation of obtaining the NSEE section of the device in the prior art, reduces the cost and operation complexity, and can quickly Get NSEE Section

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  • A method and apparatus for obtaining a sub-SEE cross section of a device
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  • A method and apparatus for obtaining a sub-SEE cross section of a device

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Embodiment Construction

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0024] figure 1 It is a flow chart of a method for obtaining the neutron single event effect cross section of a device according to an embodiment of the present invention, such as figure 1 As shown, the method includes:

[0025] Step 101, determining the category of the device to be tested;

[0026] Step 102, according to the neutron single eve...

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Abstract

The embodiment of the invention provides a method and a device for obtaining a sub-single event effect cross section of a device. The method comprises the following steps: determining a category of adevice to be tested; obtaining the NSEE cross section of the device to be tested according to the neutron single event effect NSEE cross section formula corresponding to the category; wherein, the NSEE cross-sectional formula is obtained by fitting the NSEE cross-sectional history data of the sample device. A method and apparatus provide by an embodiment of the present invention, the NSEE cross-section formula of each type of sample device is fitted by classifying and analyzing the historical data of the sample device without relying on the test data. The NSEE cross-section formula of each type of sample device is obtained by using the corresponding NSEE cross-section formula according to the type of the device to be tested. The utility model has the characteristics of fewer input parameters and easy realization, and is convenient for engineering application. The NSEE cross section of the device can be obtained quickly, the design cycle of avionics products can be effectively reduced,and the reliability of the device under atmospheric neutron radiation environment can be improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of microelectronics technology, and in particular to a method and device for obtaining a neutron single event effect cross section of a device. Background technique [0002] Electronic components for aviation applications will be affected by the radiation of atmospheric neutrons during the mission process and produce neutron single event effects (hereinafter referred to as NSEE). In order to ensure the reliability of products, it is necessary to master the The NSEE sensitive characteristics, that is, the NSEE cross section. Generally, there are two methods to obtain the NSEE cross section of the device: [0003] (1) Carry out a special NSEE test for the device to be evaluated to directly obtain the corresponding cross-sectional data. [0004] (2) Carry out 3D modeling for the microstructure of the device to be evaluated, and estimate the cross-section of the corresponding device by simulating t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50G01R31/265G01R31/26G01R31/00
CPCG01R31/00G01R31/2601G01R31/2653G06F30/20Y02E30/30
Inventor 王群勇
Owner BEIJING SHENGTAOPING TEST ENG TECH RES INST
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