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A hvpe device capable of mass production of gallium nitride

A mass production, gallium nitride technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low efficiency of gallium nitride production equipment and low product qualification rate

Active Publication Date: 2021-02-19
北京镓数智能科技有限公司
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Problems solved by technology

[0005] The purpose of the present invention is to provide a kind of HVPE equipment that can produce gallium nitride in batches, so as to solve the problems of low efficiency and low product qualification rate of gallium nitride production equipment in the prior art

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  • A hvpe device capable of mass production of gallium nitride
  • A hvpe device capable of mass production of gallium nitride
  • A hvpe device capable of mass production of gallium nitride

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Embodiment Construction

[0031] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

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Abstract

The invention relates to the technical field of semiconductor materials, and specifically discloses a HVPE equipment capable of producing gallium nitride in batches, including: a gas source chamber and a growth chamber; One end communicates with the upper part of the gas source chamber, which is suitable for the gas to enter the growth chamber from the gas source chamber and mix in the growth chamber; the middle part of the growth chamber is provided with a main lining tray and a plurality of secondary lining trays arranged on the main lining tray , the secondary substrate tray is used to place the substrate; wherein, the gas inflow channel is arranged horizontally, and the disk surface of the main substrate tray is arranged horizontally, so that the gas enters laterally and contacts the substrate vertically to grow gallium nitride. The present invention separates the intake of resource gas from the growth of gallium nitride crystals by respectively setting up a horizontal gas source chamber and a vertical growth chamber, and at the same time solves the problems of the number of sub-liner trays and the shortage of resource gases, thereby realizing the nitriding Mass production of gallium crystals.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to an HVPE device capable of batch-producing gallium nitride. Background technique [0002] GaN (related compounds containing gallium nitride: aluminum nitride, indium nitride, gallium aluminum nitride, gallium indium nitride, etc.) is the third-generation semiconductor material after silicon and gallium arsenide, and is the ideal source for making blue light—ultraviolet light waves Excellent materials for light-emitting devices (light-emitting diodes and laser diodes), detectors, and high-temperature, high-frequency, and high-power electronic devices. Gallium nitride semiconductors are 100-1000 times more efficient than silicon semiconductors. Furthermore, this dislocation density is 5*10 6 / cm 2 The gallium nitride LED material can produce LEDs that are twice as efficient as conventional LEDs. [0003] Currently, the chloride vapor phase epitaxy (Hydride Vapor ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/08C30B25/12C30B25/14C30B29/40C23C16/30C23C16/455C23C16/458
CPCC23C16/303C23C16/455C23C16/4581C30B25/08C30B25/12C30B25/14C30B29/406
Inventor 金英鎬金相模金奉辰宋国峰
Owner 北京镓数智能科技有限公司
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