Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor characteristic parameter comprehensive testing equipment

A technology of characteristic parameters and comprehensive testing, applied in the comprehensive characterization of semiconductor optical, magnetic and their mutual coupling properties, and electrical fields, it can solve problems such as unseen equipment, and achieve the effect of expanding modes and capabilities.

Inactive Publication Date: 2018-11-23
南京雨花智高科教工作坊
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no such device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor characteristic parameter comprehensive testing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] A comprehensive testing device for semiconductor characteristic parameters, which has independent optical, electrical and magnetic testing functions. The testing device includes a light source 100, an optical detection system (not shown in the drawings), an electrical system (not shown in the drawings), a magnetic Optical system (not marked in the drawings) and control system 121, the optical detection system, electrical system, magnetic system can be connected to the control system 121 through the communication interface, the optical detection system, electrical system, magnetic system any Switching between the two can be realized through the control system 121 . The opto-electromagnetic test modules can be combined at will, and the coupling test can be modulated with each other; normal temperature or variable temperature test can be carried out.

[0018] In this embodiment, the magnetic system adopts a bipolar magnet 105, and the magnetic field strength is adjustable....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides semiconductor characteristic parameter comprehensive testing equipment, and relates to the field of semiconductor performance testing. The equipment comprises a light source, anoptical detection system, an electrical system, a magnetic system, and a control system. The optical detection system, the electrical system and the magnetic system can be connected to the control system through communication interfaces. The switching between any two of the optical detection system, the electrical system and the magnetic system can be achieved through the control system. The positive effects of the invention are that the equipment can achieve the independent testing and also can achieve the coupling testing through the organic integration of the independent modules, thereby greatly improving the testing mode and capability.

Description

technical field [0001] The present application relates to the field of semiconductor performance testing, in particular to a comprehensive characterization method for semiconductor optical, electrical, magnetic and their mutual coupling properties. Background technique [0002] At present, in the field of semiconductors, optoelectronic technology is developing rapidly. For example, the LED industry contains a new technological revolution, which may establish a new industrial system; in the field of communications, the arrival of the 3G information age, the rapid development of computers and Internet , are inseparable from the rapid development of the semiconductor industry. The development of the semiconductor industry is inseparable from advanced testing technology. [0003] Light, electricity, force, and magnetism are the four basic aspects of material characterization, especially the properties of light, electricity, and magnetism, which are very important parameters f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R31/26
CPCG01R31/2603G01R31/2635
Inventor 杜娟花于健涛
Owner 南京雨花智高科教工作坊
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com