Method of fabricating semiconductor device

Abstract

A method for fabricating a semiconductor device includes forming a gate electrode structure over a first region of a semiconductor substrate, and selectively forming an oxide layer overlying the gateelectrode structure by reacting a halide compound with oxygen to increase a height of the gate electrode structure. The halide compound may be silicon tetrachloride, and the oxide layer may be silicondioxide. The gate electrode structure may be a dummy gate electrode, which is subsequently removed, and replaced with another gate electrode structure.

Description

technical field [0001] Embodiments of the present invention relate to a method of manufacturing a semiconductor device; more particularly, to a method of increasing the level of various components of the semiconductor device during processing of the semiconductor device. Background technique [0002] Because the semiconductor industry has entered the stage of nanotechnology process to pursue higher device density, higher performance, and lower cost, problems such as manufacturing and design need to be overcome. In particular, increasing device density has resulted in very high gate heights and gate aspect ratios. High gate heights and gate aspect ratios often result in gate tilting or collapse. In addition, as more steps are performed on semiconductor devices to increase device density, more and more process steps expose the gate electrodes, which may degrade the gate electrodes and cause height shrinkage of the gate electrodes. . If the gate height is too short, the devi...

AI Technical Summary

Problems solved by technology

High gate height and gate aspect ratio often lead to gate tilting or collapse

In addition, as more steps are performed on semiconductor devices to increase device density, more and more process steps expose the gate electrodes, which may degrade the gate electrodes and cause height shrinkage of the gate electrodes.

If the gate height is too short, the device may be damaged during the formation of the capping layer

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