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Control method, device and system of IGBT (insulated gate bipolar translator) reliability test

A control method and technology of a control device, which are applied in general control systems, control/regulation systems, program control, etc., can solve the problems of large measurement errors, slow processing speed, and low measurement accuracy.

Inactive Publication Date: 2018-05-04
JIANGSU CAS IGBT TECHNOLOGY CO LTD
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  • Abstract
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Problems solved by technology

However, since the speed of each binary instruction of the PLC is 0.2-0.4μs, the processing speed is relatively slow, and the measurement error is relatively large due to the relatively slow processing speed, so the measurement accuracy is low

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  • Control method, device and system of IGBT (insulated gate bipolar translator) reliability test
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  • Control method, device and system of IGBT (insulated gate bipolar translator) reliability test

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Embodiment Construction

[0056] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0057] As a first aspect of the present invention, a method for controlling IGBT reliability testing is provided, wherein the IGBT reliability testing includes repeated testing processes, such as figure 1 As shown, the control method of the IGBT reliability test corresponding to each test process includes:

[0058] S110. Simultaneously output a heating current and a test current, wherein the conduction form of the heating current and the test current is complementary conduction;

[0059] S120. Collect the first voltage signal Vce1 between the collector and emitter of the IGBT;

[0060] S130. Obtain a first junction temperature Tj1 corresponding to the first vo...

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Abstract

The invention relates to the technical field of semiconductor power devices, and particularly discloses a control method of an IGBT (insulated gate bipolar translator) reliability test. The method comprises the steps as follows: outputting a heating current and a test current; acquiring a first voltage signal Vce1 between a collector and an emitter of an IGBT; obtaining a first junction temperature Tj1 corresponding to the first voltage signal Vce1; judging whether the first junction temperature Tj1 reaches a set maximum junction temperature Tjmax, and emitting a heating interruption signal ifthe maximum junction temperature is reached; sending a fan starting signal and sending a fan rotation speed increase signal; outputting the test current; acquiring a second voltage signal Vce2 between the collector and the emitter of the IGBT; obtaining a second junction temperature Tj2 corresponding to the second voltage signal Vce2; judging whether the second junction temperature Tj2 reaches the set minimum junction temperature Tjmin, and sending a fan rotation speed reduction signal if the minimum junction temperature is reached. The invention further discloses a control device and systemof the IGBT reliability test. The provided control method of the IGBT reliability test has the advantages of high control accuracy and high efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a control method for IGBT reliability testing, a control device for IGBT reliability testing, and an IGBT reliability testing system including the control device for IGBT reliability testing. Background technique [0002] Insulated gate bipolar transistors (IGBTs) are currently one of the most commonly used electronic devices in high power devices. Researching on IGBT reliability issues plays an important role in improving the reliability of equipment. Research on the reliability of IGBTs needs to be based on the premise of clarifying the failure mechanism of IGBT devices. By observing and analyzing the aging characteristic parameters related to IGBT reliability, evaluate the health status of the current device, predict the life of the device, or directly determine the cause of device failure. The application of power cycle aging circuit accelerates the aging...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G05B19/042
CPCG01R31/2642G05B19/042
Inventor 相春蕾董志意姜梅赵鹏范秋洲
Owner JIANGSU CAS IGBT TECHNOLOGY CO LTD
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