Fin field effect transistor and method of forming the same

Abstract

A Fin Field Effect Transistor and a method for forming the same, wherein the method includes: providing a semiconductor substrate having a first initial fin; forming a first groove in the first initial fin; The first groove penetrates the first initial fin along the direction perpendicular to the extension of the first initial fin; an epitaxial layer is formed on the sidewall of the first initial fin exposed in the first groove; after the epitaxial layer is formed, the The first groove is filled with an isolation layer; after the isolation layer is formed, a gate structure across the first initial fin is formed; source and drain doped regions are formed in the first initial fin on both sides of the gate structure. The method improves the performance of FinFETs.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, a source region located in the semiconductor substrate on one side of the gate structure, and a drain region located in the semiconductor substrate on the other side of the gate structure. The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current through the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, r...

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Problems solved by technology

[0004] However, the FinFETs formed by the prior art have poor performance

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