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A method of etching inp material using rie equipment and etching inp material

An equipment and technology to be etched, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problem of polymer by-product contamination of samples, etc., to achieve high machinable aspect ratio, controllable precision, and high graphics accuracy Effect

Active Publication Date: 2021-04-13
武汉光谷量子技术有限公司
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Problems solved by technology

[0006] In view of the defects existing in the prior art, the object of the present invention is to provide a method for etching InP materials using RIE equipment to solve the problem of sample contamination by polymer by-products produced during the etching of InP by RIE equipment

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  • A method of etching inp material using rie equipment and etching inp material
  • A method of etching inp material using rie equipment and etching inp material
  • A method of etching inp material using rie equipment and etching inp material

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Embodiment Construction

[0036] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0037] Main equipment used among the present invention and term are explained as follows:

[0038] RIE, the full name is Reactive Ion Etching, reactive ion etching, is a dry etching process in the microelectronics industry.

[0039] When the Reactive Ion Etching (RIE, Reactive Ion Etching) equipment is working, it will generate an ion sheath with a thickness of hundreds of microns by applying a high-frequency voltage (RF, radio frequency) of 10 to 100 MHZ between the plate electrodes. A sample is placed in it, and ions hit the sample at high speed to complete chemical reaction etching.

[0040] Plasma Enhanced Chemical Vapor Deposition (PECVD, Plasma Enhanced Chemical VaporDeposition) equipment, which uses microwave or radio frequency to ionize the gas containing the constituent atoms of the film to form plasma locally, and the plasma chemica...

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Abstract

The invention discloses a method for etching InP materials using RIE equipment and etching InP materials, and relates to the field of dry etching of semiconductor materials, comprising the following steps: S1, growing a layer of SiO on an InP epitaxial wafer through PECVD equipment 2 Thin film; S2, through the photolithography process, copy the pattern to be etched on the mask plate on the photoresist; S3, transfer the pattern on the sample photoresist after photolithography to SiO 2 On the barrier layer; S4, remove the photoresist by wet degumming; S5, wash the sample to be etched with KOH solution for 2 to 3 minutes, rinse and dry after cleaning; S6, load the sample into Etching is performed in the chamber of the RIE process. The method for etching InP material by using RIE equipment in the invention solves the problem of sample contamination by polymer by-products produced in the process of etching InP by reactive ion etching equipment by improving the dry etching process.

Description

technical field [0001] The invention relates to the field of dry etching of semiconductor materials, in particular to a method for etching InP materials using RIE equipment and etching InP materials. Background technique [0002] In the field of semiconductor optoelectronics, the III-V material InP is usually used as a raw material. Therefore, in the process of making an InP-based chip, it is necessary to etch the InP-based epitaxial wafer. After etching, the pattern line width, side wall angle and etch The cleanliness of the patterned surface has a crucial impact on the performance of semiconductor devices. [0003] At present, when InP is etched, wet etching is used when the line width accuracy of the etched pattern and the sidewall morphology of the etched pattern are not high; the wet etching solution is mainly hydrochloric acid and The mixed solution of phosphoric acid has a high etching rate, but the etching uniformity, pattern line width, and pattern sidewall angle a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/02
CPCH01L21/02057H01L21/3065
Inventor 晏小平秦金王亮王肇中
Owner 武汉光谷量子技术有限公司
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