Curved gate-drain compound field plate current aperture heterojunction device

Abstract

The invention discloses an arc gate-drain composite field plate-based current aperture heterojunction device. The heterojunction device comprises a schottky drain (13), a substrate (1), a drifting layer (2), an aperture layer (3), two two-stage-step-structured current blocking layers (4), an aperture (5), a channel layer (6), a barrier layer (7), a cap layer (8) and a gate (10) from the bottom up; stages (9) are etched on the two sides of the cap layer; source grooves (11) are etched in the two sides of the channel layer and the barrier layer; sources (12) are deposited in the source grooves (11); all regions, except the schottky drain bottom, are covered with a passivation layer (14); arc-shaped steps are etched on the upper part and the back surface of the left and right sides of the passivation layer respectively; metal is deposited on the arc-shaped stages to form an arc-shaped gate field plate (15) and an arc-shaped drain field plate (16); and the arc-shaped gate field plate and the arc-shaped drain field plate are electrically connected with the gate and the schottky drain respectively. The heterojunction device has high bidirectional blocking function, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to an arc-shaped gate-drain compound field plate current aperture heterojunction device, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of ...

AI Technical Summary

Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field effect devices. As a result, the strongest electric field peak in the device drift layer is located near the interface between the current blocking layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer, so the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN The field plate structure is used in the base current aperture heterojunction field effect device, and there is almost no improvement in device performance

[0009] In addition, the existing GaN-based current aperture heterojunction field effect devices all use ohmic drains. When a very low reverse voltage is applied to the device drain, the current blocking layer in the device will fail, forming a large drain-source Leakage current, and as the drain reverse voltage increases, the device gate will also open forward, and a large gate current will pass, eventually leading to device failure

Therefore, none of the existing GaN-based current aperture heterojunction field effect devices can realize the reverse blocking function. break feature has no effect

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