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A kind of nand Flash voltage automatic compensation method and device

An automatic compensation and voltage technology, applied in information storage, static memory, instruments, etc., can solve problems such as threshold voltage range shift, wrong judgment and change of CELL data, avoid misjudgment and improve data reading and writing accuracy Effect

Active Publication Date: 2020-01-24
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at different temperatures, the characteristics of the semiconductor device will change with the change of temperature, which will cause the threshold voltage of the CELL to change, so that the threshold voltage range represented by the data stored in the CELL will shift, making the read When fetching CELL data, wrong judgments may occur on the CELL data

Method used

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  • A kind of nand Flash voltage automatic compensation method and device
  • A kind of nand Flash voltage automatic compensation method and device
  • A kind of nand Flash voltage automatic compensation method and device

Examples

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Effect test

Embodiment 1

[0047] A method for automatic voltage compensation of NAND Flash provided by an embodiment of the present invention is introduced in detail.

[0048] refer to figure 1 , shows a flow chart of the steps of a method for automatic voltage compensation of NAND Flash in an embodiment of the present invention.

[0049] Step 110, detecting the temperature state voltage of the target NAND Flash; the temperature state voltage is used to characterize the temperature state of the target NAND Flash.

[0050] Step 120, obtaining an adjustment amount for adjusting the current determination voltage of each storage unit in the target NAND Flash according to the temperature state voltage and a preset reference voltage.

[0051] Step 130: Compensate and adjust the current judgment voltage of each memory cell in the target NAND Flash according to the adjustment amount, so as to obtain the target judgment voltage of each memory cell.

[0052] like Figure 1A It is an array organization structu...

Embodiment 2

[0076] A method for automatic voltage compensation of NAND Flash provided by an embodiment of the present invention is introduced in detail.

[0077] refer to figure 2 , shows a flow chart of the steps of a method for automatic voltage compensation of NAND Flash in an embodiment of the present invention.

[0078] Step 210, detecting the temperature state voltage of the target NAND Flash; the temperature state voltage is used to characterize the temperature state of the target NAND Flash; the temperature state voltage is proportional to the temperature of the target NAND Flash.

[0079] Step 220, calculating a first difference between the temperature state voltage and the reference voltage.

[0080] Step 230, performing analog-to-digital conversion on the first difference to obtain an adjustment amount for adjusting the current determination voltage of each memory cell in the target NAND Flash.

[0081] In this application, the first difference between the detected temperatu...

Embodiment 3

[0092] A method for automatic voltage compensation of NAND Flash provided by an embodiment of the present invention is introduced in detail.

[0093] refer to image 3 , shows a flow chart of the steps of a method for automatic voltage compensation of NAND Flash in an embodiment of the present invention.

[0094] Step 310, detecting the temperature state voltage of the target NAND Flash; the temperature state voltage is used to characterize the temperature state of the target NAND Flash; the temperature state voltage is inversely proportional to the temperature of the target NAND Flash.

[0095] Step 320, calculating a first difference between the temperature state voltage and the reference voltage.

[0096] Step 330, performing analog-to-digital conversion on the first difference to obtain an adjustment amount for adjusting the current determination voltage of each memory cell in the target NAND Flash.

[0097] Step 340, for each storage unit in the target NAND Flash, calcu...

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Abstract

The invention discloses a NAND Flash voltage self-compensating method and device, and belongs to the technical field of the chip storage. The method comprises the following steps: detecting a temperature state voltage of the target NAND Flash, wherein the temperature state voltage is used for representing the temperature state of the target NAND Flash; according to the temperature state voltage and a preset reference voltage, to obtain the adjustment amount for adjusting the current judgment voltage of each storage unit in the target NAND Flash; according to the adjustment amount, performing the compensating adjustment to the current judgment voltage of each storage unit in the target NAND Flash, to obtain a target judgment voltage of each storage unit. The method is capable of solving the technical problems that the threshold voltage range represented by the data stored in each storage unit in the current NAND Flash under the different temperature conditions is deviated so that the error judgment happens easily while the data in the storage unit is read. The method has the beneficial effects of voiding the error judgment caused by the temperature change, and improving the read-write accuracy of the data.

Description

technical field [0001] The invention relates to the technical field of chip storage, in particular to a method and device for automatically compensating voltage of a NAND Flash. Background technique [0002] According to the different technical architectures implemented, flash memory chips can be divided into several types such as NOR flash, NAND flash and DINOR flash. Compared with several other types of flash memory, NAND flash can provide extremely high cell density, can achieve high storage density, and the speed of writing and erasing is also very fast, so it is ideal for realizing large-capacity data storage storage medium. As a non-volatile storage medium, NAND FLASH uses semiconductors as memory carriers. Compared with traditional storage devices, it can withstand temperature changes, mechanical vibrations and shocks, has higher reliability, and is easy to achieve high speed and low power consumption. The storage system is an ideal solution for large-capacity stora...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/30G11C16/34G11C5/14
CPCG11C5/147G11C16/30G11C16/3404
Inventor 苏志强刘会娟张现聚邓龙利
Owner GIGADEVICE SEMICON (BEIJING) INC
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