A kind of preparation method of dustproof surface
A dust-proof and plasma technology, applied in the field of ion chemical vapor deposition, can solve the problems of poor substrate bonding, difficult coating preparation, high cost, etc., and achieve good weather resistance, excellent physical and electrical properties.
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Embodiment 1
[0042] A method for preparing a dust-proof surface, characterized in that it comprises the following steps:
[0043] (1) Place the substrate in the reaction chamber of the plasma chamber, continuously evacuate the reaction chamber, pump the vacuum in the reaction chamber to 10 millitorr, and feed inert gas;
[0044] In step (1), the base material is a solid material, and the solid material is a solar cell panel;
[0045] In step (1), the volume of the plasma chamber is 1000 L, and the temperature of the plasma chamber is controlled at 30° C.; the flow rate of the inert gas is 5 sccm, and the inert gas is argon.
[0046] (2) Introduce the monomer vapor to a vacuum of 30 mTorr, turn on the plasma discharge, the power of the plasma discharge is 2W, and the discharge time is 7200s, and chemical vapor deposition is carried out to prepare a dense coating; after the deposition of the dense coating is completed , adjust the power of the plasma discharge to be 160W, and the discharge ti...
Embodiment 2
[0057] The basic process steps of this embodiment are the same as those of Example 1, and the different process parameters are as follows:
[0058] 1. In step (1):
[0059] The vacuum degree in the reaction chamber is pumped to 40 millitorr, and an inert gas is introduced; the solid material is an LED display; the volume of the plasma chamber is 870L, and the temperature of the plasma chamber is controlled at 35°C; the flow rate of the inert gas is 15 sccm, the inert gas is helium.
[0060] 2. In step (2):
[0061] Introduce the monomer vapor to a vacuum of 80 millitorr, turn on the plasma discharge, the power of the plasma discharge is 25W, and the discharge time is 5800s, perform chemical vapor deposition to prepare a dense coating; after the dense coating is deposited, adjust the plasma The power of bulk discharge is 220W, and the discharge time is 780s;
[0062] The monomer vapor composition that passes into in the described step (2) is:
[0063] A mixture of three mon...
Embodiment 3
[0071] The basic process steps of this embodiment are the same as those of Example 1, and the different process parameters are as follows:
[0072] 1. In step (1):
[0073] The vacuum in the reaction chamber is pumped to 90 millitorr, and an inert gas is introduced; the solid material is a glass product; the volume of the plasma chamber is 680L, and the temperature of the plasma chamber is controlled at 40°C; the flow rate of the inert gas is 50 sccm , the inert gas is a mixture of helium and argon.
[0074] 2. In step (2):
[0075] Introduce the monomer vapor to a vacuum of 160 mTorr, turn on the plasma discharge, the power of the plasma discharge is 60W, and the discharge time is 4500s, perform chemical vapor deposition to prepare a dense coating; after the dense coating is deposited, adjust the plasma The power of bulk discharge is 300W, and the discharge time is 650s;
[0076] The monomer vapor composition that passes into in the described step (2) is:
[0077] A mixtu...
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