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Quantum dot electroluminescent device

A technology of electroluminescent devices and quantum dots, which is applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of low efficiency of quantum dot electroluminescent devices, and achieve the effect of improving current efficiency

Active Publication Date: 2017-08-01
KUNSHAN NEW FLAT PANEL DISPLAY TECH CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is: the efficiency of quantum dot electroluminescent devices in the prior art is not high, and needs to be further improved

Method used

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  • Quantum dot electroluminescent device

Examples

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Embodiment 1

[0091]In this embodiment, the quantum dot material is added to the phosphorescent host material and TADF material (ACRXTN) as the light-emitting layer, and the weight ratio of phosphorescent host material: TADF material: quantum dot material is 60:20:20. ACRXTN is a known TADF material, and the triplet energy level of its CT excited state is higher than that of the n-π excited state, and the difference is between 0 and 0.3 eV.

[0092] The quantum dot electroluminescence device structure of the present embodiment is as follows:

[0093] ITO / HATCN(10nm) / NPB(40nm) / TCTA(20nm) / CBP:ACRXTN:CdSe quantum dots(60:20:20)(30nm) / BCP(20nm) / Alq 3 (30nm) / LiF(1nm) / Al(150nm)

[0094]

[0095] ACRXTN.

[0096] The experimental data of above-mentioned comparative example and embodiment are shown in the table below:

[0097] Because the colors of the comparative examples and examples are not exactly the same, it is impossible to simply compare the current efficiency. We focus on comparing ...

Embodiment 9 and Embodiment 10

[0108] The structure of the quantum dot electroluminescent device of embodiment 9 and embodiment 10 is similar to embodiment 1, and the quantum dot luminescent layer is made of CBP, TADF material and CdSe quantum dot, and the weight ratio of the three is 60:20:20, the difference The only difference is that different TADF materials are used in each embodiment.

[0109] ITO / HATCN(10nm) / NPB(40nm) / TCTA(20nm) / CBP:TADF material: CdSe quantum dots(60:20:20) (30nm) / BCP(20nm) / Alq 3 (30nm) / LiF(1nm) / Al(150nm)

[0110] The wavelength corresponding to the peak of the luminescence spectrum is 530nm, and the particle size of the CdSe quantum dot is 5.5nm, and the wavelength corresponding to the peak of the absorption spectrum is 514nm.

[0111] The wavelength corresponding to the peak of the emission spectrum of ACRXTN is 490nm.

[0112] The wavelength corresponding to the peak of the emission spectrum of PXZ-TRZ is 550nm.

[0113] The wavelength corresponding to the peak of the emission...

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Abstract

The invention discloses a quantum dot electroluminescent device, which comprises a light emitting layer. The light emitting layer comprises a quantum dot material and a thermally-activated delayed fluorescence (TADF) material; and after the luminescent spectrum of the thermally-activated delayed fluorescence material and the absorption spectrum of the quantum dot material are subjected to normalization, the difference of wavelengths corresponding to wave crests is within 50 nm. The TADF material in the light emitting layer of the quantum dot electroluminescent device can effectively convert triplet excitons to singlet excitons, the singlet excitons are then transmitted to quantum dots through Forster fluorescence resonance energy transfer, the quantum dots are excited to emit light, and the current efficiency of the quantum dot electroluminescent device is thus improved.

Description

technical field [0001] The invention belongs to the field of quantum dot electroluminescence, and in particular relates to a high-efficiency quantum dot electroluminescence device. Background technique [0002] Quantum dot (quantum dot) is a new generation of luminescent material invented based on the quantum size effect, and the luminescence spectrum changes with the size change. Due to the controllable synthetic diameter and the limitation of the rigid structure, the half-width of the luminescent spectrum is narrow and the color purity is high, which is very suitable as a luminescent material with high color purity. [0003] At present, the efficiency of ordinary quantum dot electroluminescent devices (QD-LED) is low. The reason is that the luminescence of quantum dots belongs to fluorescence, and only singlet excitons can be used. The theoretical internal quantum efficiency does not exceed 25%, and there is still 75%. The triplet excitons in the ions cannot be utilized, ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54
CPCH10K50/115H10K50/12H10K50/121H10K2101/27
Inventor 闵超李维维赵菲刘嵩敖伟
Owner KUNSHAN NEW FLAT PANEL DISPLAY TECH CENT
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