Chemical mechanical polishing liquid used for flattening barrier layer

A chemical mechanical and polishing fluid technology, applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of low polishing rate, low yield, and copper corrosion of the barrier layer, and achieve reduced production costs, strong correction capabilities, and improved work efficiency effect

Inactive Publication Date: 2017-07-07
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Claims
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Problems solved by technology

[0005] At present, reports on polishing fluids can be divided into alkaline and acidic types. For example, CN1400266 discloses an alkaline barrier layer polishing fluid, which includes silica abrasives, amine compounds and nonionic surfactants. Polishing liquid can corrode copper; CN101372089A discloses a kind of alkaline barrier layer polishing liquid, and this polishing liquid comprises silica abrasive material, corrosion inhibitor, oxidizing agent, noni

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  • Chemical mechanical polishing liquid used for flattening barrier layer
  • Chemical mechanical polishing liquid used for flattening barrier layer
  • Chemical mechanical polishing liquid used for flattening barrier layer

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Abstract

The invention discloses chemical mechanical polishing liquid used for flattening a barrier layer. The polishing liquid comprises grinding particles, an azole compound, organic phosphonic acid, nonionic surfactant and an oxidizing agent. The chemical mechanical polishing liquid has the advantages that the polishing rate and selection ratio requirements of various materials during barrier layer polishing can be satisfied while high correcting ability to semiconductor device surface defects is achieved, flattening can be achieved fast, work efficiency is increased, and product cost is lowered.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid used for barrier layer planarization and its application method Background technique [0002] In today's integrated circuit manufacturing field, the process standards of interconnection technology are constantly improving. The specific performance is that the number of layers in the interconnection process is gradually increasing, and at the same time, its feature size is continuously shrinking. Therefore, the requirements for the surface flatness of silicon wafers are also increasing. high. Because creating complex and dense structures on semiconductor wafers is very limited if planarization cannot be achieved, chemical mechanical polishing (CMP) is currently the most effective method for achieving planarization of the entire silicon wafer. [0003] The CMP process is a processing method that obtains surface planarization through c...

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 姚颖荆建芬蔡鑫元邱腾飞宋凯
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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