Anode stabilizing device of IGZO film formation equipment

Abstract

The invention discloses an anode stabilizing device of IGZO film formation equipment. The anode stabilizing device comprises isolation assemblies arranged on the periphery of an anode. The isolation assemblies are provided with channels allowing electrons to be guided out of the anode. The isolation assemblies are additionally arranged on the periphery of the IGZO film formation anode and can effectively prevent target material molecules from sputtering to the anode, and therefore the high potential is kept on the surface of the anode, the electrons can be guided out effectively and fast, the whole space electron distribution is more uniform, the heat effect brought by electron concentration is reduced, the service life of the anode is prolonged, the anode is kept stable, and the equipment activation rate is increased; meanwhile, the bottom of the anode is all covered with the isolation assemblies, and therefore the electrons can be prevented from being concentrated at the bottom; and in addition, the anode avoids IGZO insulation film deposition through the isolation assemblies, electric fields of the whole anode are uniform, the problem that due to thin film layers at the upper end and the lower end, the electric field in the middle is weak, and the electric fields at the two ends are strong cannot be caused, and the film formation rate is stable.

Description

technical field [0001] The invention relates to the field of flat panel display, in particular to an IGZO film forming device. Background technique [0002] At present, the IGZO film forming technology generally adopts the following method: in a vacuum environment, using a DC power supply 105, the process gas 101Ar introduced is dissociated to form a plasma 102, and the Ar produced by the plasma 102 + Under the action of the electric field between the cathode 3 (IGZO target) and the anode 2, the accelerated motion has a very high speed Ar + The target molecules 103 are sputtered out by bombarding on the IGZO target, and the target molecules 103 are attached to the target substrate 104 to form a thin film. The above film formation principle reference figure 1 . [0003] However, during this process, since the anode is distributed on both sides of the target, the sputtered target molecules are deposited on the anode, and the IGZO film on the anode gradually becomes thicker ...

AI Technical Summary

Problems solved by technology

As the thickness of the insulating film increases, the anode resistance increases, its potential gradually decreases, and the anode effect gradually weakens, causing electrons to be unable to be effectively exported, easy to form local aggregation, affect the plasma distribution, and reduce the film formation rate

In addition, a large number of electrons gather at the bottom of the uncoated anode, causing the current at the bottom of the anode to increase, resulting in local thermal effects, burning the aluminum layer on the surface of the anode, and reducing the service life of the anode

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