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An Alternative Method for Image Sensor Performance

An image sensor and performance technology, applied in the field of image sensors, can solve difficult problems such as the quality of CMOS image sensors

Active Publication Date: 2019-08-20
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, due to the large number of parameters and strong professionalism, it is difficult for ordinary people to distinguish the quality of a CMOS image sensor through parameters.
Moreover, there is rarely an indicator that can unify all kinds of parameters

Method used

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  • An Alternative Method for Image Sensor Performance
  • An Alternative Method for Image Sensor Performance
  • An Alternative Method for Image Sensor Performance

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Embodiment Construction

[0019] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0020] Since different pixel areas correspond to different photosensitive effects, it is necessary to normalize the performance of pixels of different sizes to the pixel per unit area. Generally speaking, for the same manufacturing level, the unit area corresponding to pixels of different sizes The imaging quality of the pixels is consistent. For example, the photosensitivity of 5um*5um pixels must be better than that of 2um*2um pixels, but for the same process level, the photosensitivity of pixels per unit area corresponding to 5um*5um pixels, and the photosensiti...

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Abstract

The invention provides a method for detecting the performance of an image sensor, which includes: obtaining the quantum efficiency of the image sensor, the image quality resolution equivalent to the unit area when the actual pixel reaches the saturated output, the saturated output voltage, and the required value when the saturated output is reached. Exposure time; establish the relationship between intrinsic photosensitive efficiency and quantum efficiency, the image quality resolution equivalent to unit area when the actual pixel reaches saturated output, saturated output voltage, and the intrinsic photosensitive efficiency required for exposure time to reach saturated output , where the intrinsic photosensitive efficiency is proportional to the quantum efficiency, the image quality resolution equivalent to the unit area when the actual pixel reaches the saturated output, proportional to the saturated output voltage, and the exposure time required to reach the saturated output It is inversely proportional; according to the relational expression of intrinsic photosensitivity, evaluate the performance of the image sensor. The invention unifies various parameters of the CMOS image sensor by utilizing the intrinsic photosensitivity efficiency.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a method for replacing the performance of an image sensor. Background technique [0002] Image sensor chips are the "eyes" for electronic devices to obtain information, and have become an indispensable standard configuration for electronic terminal products. According to the "CMOS Image Sensor Industry Status" report of a market research company, the operating income of the CMOS image sensor (CIS) market will grow to 16 billion US dollars in 2020, with a compound annual growth rate of more than 11%. And even high-profile products in the field of integrated circuits. With the development of CMOS image sensor technology, the CIS market will be further applied and continue to grow in the fields of consumer electronics, wearable devices, surveillance security, artificial intelligence and other fields in the future. [0003] There are many types of CMOS image sensors, from the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374
CPCH04N25/76
Inventor 李琛皮常明任铮张远顾学强
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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