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60Co gamma ray radiation response derivation and derivation test method of soi NMOSFET

A technology of radiation response and test method, applied in the field of 60Coγ ray radiation response derivation and derivation test, can solve problems such as difficulty in determining and difficult Coγ ray damage, and achieve the effect of accurate derivation, improved R&D efficiency and high precision

Active Publication Date: 2018-12-25
成都天诚慧芯科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires adding a bias to the device substrate irradiated by X-rays, but how high the bias should be added is difficult to determine
Therefore, it is difficult to estimate the X-ray to 60 Co γ-ray damage

Method used

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  • 60Co gamma ray radiation response derivation and derivation test method of soi NMOSFET
  • 60Co gamma ray radiation response derivation and derivation test method of soi NMOSFET
  • 60Co gamma ray radiation response derivation and derivation test method of soi NMOSFET

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Experimental program
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Effect test

specific Embodiment 1

[0026] An SOI NMOSFET 60 Co gamma ray radiation response derivation method, the specific method is: under the extremely low electric field, for two SOI NMOSFETs under the same structure and process conditions, one is X-rayed, and the other is X-rayed. 60 Co gamma radiation; contrast X-rays with 60 The dose enhancement factor DEF is extracted from the ratio of the threshold voltage shift caused by the trap charge of the oxide layer under the two kinds of Coγ-ray radiation; the radiation dose level of the X-ray test data is multiplied by DEF, and the threshold voltage shift caused by irradiation is multiplied by the factor 0.7, so that 60 Radiation response of Co gamma rays;

[0027] The extremely low electric field is an electric field intensity less than 0.05MV / cm.

specific Embodiment 2

[0028] On the basis of specific embodiment 1, the X-ray radiation source is a 10keV X-ray radiation source.

specific Embodiment 3

[0029]On the basis of specific embodiment 1 or 2, under ON bias, contrast X-ray and 60 ΔV under two kinds of Coγ-ray radiation ot The dose-enhancing factor DEF was extracted from the relationship of variation with dose.

[0030] Under ON bias, since the bias applied to the positive gate has little effect on the buried oxide layer, the electric field in the buried oxide layer is less than 0.05MV / cm. So for ON bias, by comparing X-ray with 60 Co gamma ray ΔV ot The dose-enhancing factor DEF was extracted from the relationship of variation with dose.

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Abstract

The invention provides deducting and deduction testing methods for <60>Co Gamma-ray radiation response of SOI (silicon on insulator) NMOSFET (N-channel metal oxide semiconductor field-effect transistor); in a very low electric field, two SOI NMOSFETs under same structure and process conditions are subjected to X-ray radiation and <60>Co Gamma-ray radiation respectively; ratios of threshold voltage drifts under X-ray radiation and <60>Co Gamma-ray radiation due to oxide layer trap charge are compared to extract a DEF (dose effect factor); radiation dose level of X-ray test data is multiplied by the DEF, threshold voltage drift value due to radiation is multiplied by the factor 0.7, and radiation response to <60>Co Gamma-ray is acquired accordingly; the methods have small application limits, Vth deduction is more accurate, mass radiation tests for <60>Co source can be omitted, testing cost is greatly reduced, the advantage of X-ray in facilitating and quickening the provision of feedback is given to full play, and research and development efficiency is improved.

Description

technical field [0001] The present invention relates to a SOI NMOSFET 60 Co gamma ray radiation response derivation and derivation test method, especially related to a SOI NMOSFET suitable for semiconductor components 60 Co gamma ray radiation response derivation and derivation test method. Background technique [0002] For a long time, the total dose ionizing radiation test of semiconductor components has been using Co source as the radiation source. The US military test standard MIL-STD-883C also stipulates 60 Co gamma rays are the standard test source for total dose radiation testing. But large Co sources can only use natural radioactive 60 Co material is harmful to the environment, the radiation dose rate is relatively low, and the radiation time is long, so it cannot meet the requirements of accelerated experiments and radiation testing of a single silicon wafer level wafer, and is not suitable for large-scale use, especially for production enterprises. [0003] As...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/265
CPCG01R31/265
Inventor 田浩贺凌翔
Owner 成都天诚慧芯科技有限公司
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