Method of trimming fin structure

Abstract

A method of trimming a fin structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure cladding the fin structure, in which the epitaxy structure has a first lattice plane with Miller index (111), a second lattice plane with Miller index (100) and a third lattice plane with Miller index (110); and (iii) removing the epitaxy structure and a portion of the fin structure to obtain a trimmed fin structure.

Description

technical field [0001] The present invention relates to methods of trimming fin structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC manufacturing have produced generations of ICs, with each generation producing smaller and more complex circuits than the previous generation. Today, the semiconductor industry has entered nanotechnology nodes for higher device density and better electrical performance, and various challenges from manufacturing and design have led semiconductor technology to three-dimensional designs, such as Fin Field Effect Transistor (FinFET ). A typical FinFET is fabricated with thin "fins" extending over a substrate. The channel of the FinFET is formed in the fin. In addition, a gate is formed to wrap around the fin, and thus a tri-gate structure is fabricated. It is beneficial to have the gate on three sides of the channel, which allows the gate to cont...

AI Technical Summary

Problems solved by technology

However, as devices continue to be scaled down, conventional techniques are no longer fully satisfactory in all respects

Images