Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Interposer substrate and manufacture method thereof

A substrate and intermediary technology, applied in the field of an interposer substrate for packaging a stack structure and its manufacturing method, can solve problems such as product design limitations and the like

Inactive Publication Date: 2016-06-08
PHOENIX PIONEER TECH
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in the existing manufacturing method of the intermediary substrate 1, the circuit layers between the layers need to form through holes 100 by laser, and then electroplate metal materials to form the conductive pillars 12, so the end faces of the conductive pillars 12 are all circular in shape. , so the conductive pillar 12 can only be designed as a circular shape, resulting in limited product design

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Interposer substrate and manufacture method thereof
  • Interposer substrate and manufacture method thereof
  • Interposer substrate and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The implementation of the present invention will be described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0046] It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present invention. The disclosed technical content must be within the scope covered. At the same time, terms such as "above", "f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an interposer substrate and a manufacture method thereof. A loading plate with a first line layer is provided, and the first line layer includes multiple first conductive poles; a first insulation layer is formed on the loading plate, and the first conductive poles are exposed; a second line layer is formed on the first conductive poles and electrically connected with the first conductive poles; multiple second conductive poles are formed on the second line layer; a second insulation layer is formed on the first insulation layer and wraps the second line layer and the second conductive poles, and the end surfaces of the second conductive poles are exposed; and the loading plate is removed. The end surfaces of the first conductive poles are of different geometric shapes except circle, and thus, laying can be carried out according to requirements, and the flexibility of design is improved.

Description

technical field [0001] The invention relates to an intermediary substrate, in particular to an intermediary substrate for packaging and stacking structures and its manufacturing method. Background technique [0002] With the evolution of semiconductor packaging technology, semiconductor devices (Semiconductordevice) have developed different packaging types. In order to improve electrical functions and save packaging space, multiple packaging structures are stacked to form a package stack structure (Package on Package, PoP) , this kind of packaging method can take advantage of the heterogeneous integration characteristics of System in Package (SiP for short), and can integrate electronic components with different functions, such as memory, central processing unit, graphics processor, image application processor, etc., through stack design It achieves system integration and is suitable for various thin and light electronic products. [0003] The early package stack structure ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L21/60
CPCH01L21/4857H01L21/486H01L23/49827H01L2924/0002H01L2924/00
Inventor 许哲玮许诗滨
Owner PHOENIX PIONEER TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products