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A semiconductor device and method of making the same

A manufacturing method and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficulty

Active Publication Date: 2018-10-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device structure will face huge challenges, and it is difficult to realize the fabrication of the device structure using traditional silicon processes

Method used

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  • A semiconductor device and method of making the same
  • A semiconductor device and method of making the same
  • A semiconductor device and method of making the same

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Embodiment Construction

[0025] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0026] For a thorough understanding of the present invention, a detailed description will be presented in the following description to illustrate the fabrication method and device structure of the present invention. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0027] It should be noted that the terms used ...

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Abstract

The invention relates to a semiconductor device and a manufacturing method thereof. According to a Pseudo-Spin coupling graphene field-effect transistor formed in the invention, a smaller-dimension MOSFET can be provided for silicon CMOS device preparing technology; and compared with other semiconductor materials, the graphene has unexpected advantages, such as, ultrahigh migration rate, bipolar conductor and super flexibility and the like. Compared with a vertical Pseudo-Spin field-effect transistor obtained by an existing method, the Pseudo-Spin coupling graphene field-effect transistor obtained through the method in the invention is easier to manufacture and more excellent in performance; and the Pseudo-Spin coupling graphene field-effect transistor can be compatible with the silicon CMOS technology.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing process, in particular, the present invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, the improvement of integrated circuit performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. At present, as the semiconductor industry has advanced to the nanotechnology process node in pursuit of high device density, high performance and low cost, the CMOS semiconductor devices containing silicon materials are shrinking continuously, and the preparation of silicon materials in smaller-sized devices has received various physical Due to the limit and limitation of chemical characteristics, new materials and new devices are proposed in semiconductor technology to meet the requirements of device shrinkage. [0003] The field-e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/49H01L21/336
Inventor 郑凯
Owner SEMICON MFG INT (SHANGHAI) CORP
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