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Schottky rectifier and making method thereof

A manufacturing method and rectifier technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of insufficient reverse withstand voltage and large reverse leakage current, and achieve the effect of high reverse withstand voltage.

Active Publication Date: 2015-07-22
WILL SEMICON (SHANGHAI) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The technical problem to be solved by the present invention is to provide a Schottky rectifier with high voltage resistance and its manufacturing method in order to overcome the shortcomings of the Schottky rectifier in the prior art that the reverse withstand voltage is not high enough and the reverse leakage is relatively large

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  • Schottky rectifier and making method thereof
  • Schottky rectifier and making method thereof
  • Schottky rectifier and making method thereof

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Embodiment Construction

[0058] The present invention is further illustrated below by means of examples, but the present invention is not limited to the scope of the examples. For the experimental methods that do not specify specific conditions in the following examples, select according to conventional methods and conditions, or according to the product instructions.

[0059] refer to Figure 5 , the Schottky rectifier includes a first conductivity type substrate 100, and

[0060] A first conductivity type conduction layer 101 formed on the surface of the first conductivity type substrate 100;

[0061] at least one trench formed in the first conductivity type conduction layer 101,

[0062] a sidewall oxide layer 103 and a bottom oxide layer 104 formed in each trench, wherein the sidewall oxide layer 103 is formed on the sidewall of the trench, and the bottom oxide layer 104 is formed at the bottom of the trench;

[0063] polysilicon 105 deposited in the trench, the polysilicon doped with impuritie...

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Abstract

The invention discloses a Schottky rectifier and a making method thereof. The Schottky rectifier comprises a first conductivity type substrate, a first conductivity type conductive layer formed on the surface of the first conductivity type substrate, at least one trench formed in the first conductivity type conductive layer, side wall oxide layers and bottom oxide layers formed in the trenches, polycrystalline silicon deposited in the trenches and doped with a second conductivity type impurity, and a metal layer formed on the surface of the first conductivity type conductive layer, wherein the doping concentration of the second conductive type impurity changes from high to low from the top to the bottom of the trenches in the depth direction of the trenches. According to the invention, a reverse electric field originally acting on a Schottky barrier quickly leaves a Schottky barrier region and is borne by a depletion layer, so that electric leakage due to original action of the electric field on the Schottky barrier is avoided, and the overall reverse withstand voltage of the device is greatly improved.

Description

technical field [0001] The invention relates to a rectifying device and a manufacturing method thereof, in particular to a high-voltage Schottky rectifier and a manufacturing method thereof. Background technique [0002] As one of the most commonly used semiconductor diodes, rectifier diodes are widely used in electronic and electrical products such as power rectification, current control, and chopping because of their unidirectional conductivity and high voltage resistance under reverse bias. field. With the widespread use of mobile digital products, such as mobile phones and tablet computers, rectifier devices with low forward voltage drop and high-speed response are indispensable components in these products. Schottky diodes are one type of rectifier diodes. Their forward and reverse conversion speed is fast, and their forward voltage drop is lower than that of the PN junction of silicon materials. They are widely used in AC-DC conversion power supplies and solar energy....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329H01L21/265
CPCH01L29/06H01L29/0607H01L29/66143H01L29/8725
Inventor 顾建平纪刚
Owner WILL SEMICON (SHANGHAI) CO LTD
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