Liquid supplying apparatus
A technology for liquid supply and liquid treatment, applied in liquid injection devices, devices for coating liquid on surfaces, spray devices, etc., to achieve the effects of reducing pressure loss, suppressing pollution, and suppressing complications
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experiment example 1
[0176] First, using a wafer W having a diameter of, for example, 450 mm, the discharge amount of the resist solution is varied to various values, and the extent to which the resist solution spreads on the wafer W is measured. Specifically, the wafer W is rotated around a vertical axis at an arbitrary rotational speed, the resist liquid is discharged from the center of the wafer W, and the resist liquid (resist film) diffused in a circular shape on the wafer W is measured. ) radius size.
[0177] The result is as Figure 25 As shown, when the rotation speed of the wafer W is 600 rpm, when 15 g of the resist liquid is discharged, the resist liquid spreads into a circle with a radius of 150 mm. Accordingly, it can be seen that about 15 g of the resist solution is sufficient to coat the entire surface of the wafer W having a diameter of 300 mm. On the other hand, in order to apply a resist solution to the entire surface of a wafer W with a diameter of 450 mm, a resist solution w...
experiment example 2
[0179] Next, an experiment was conducted to confirm the relationship between the liquid supply pressure of the resist liquid and the discharge amount of the resist liquid when the resist liquid was stored on the side of the cassette and the cassette was pressurized to discharge the resist liquid. related relationship. The result is as Figure 26 As shown, it can be seen that the above-mentioned pressure has an extremely high correlation with the discharge amount of the resist solution. In addition, when the pressure of the cartridge is set to an arbitrary value, similarly confirming the correlation between the discharge time for discharging the resist liquid and the discharge amount of the resist liquid, it is obtained that Figure 27 The results shown. Also from this result, it can be seen that the discharge time of the resist solution has an extremely high correlation with the discharge amount of the resist solution.
experiment example 3
[0181] An experiment was conducted to confirm the effect of the discharge time of the resist solution on the resist film when the resist solution was discharged to the wafer W. FIG. As a result, when the resist solution was discharged at an extremely slow discharge rate of 0.08 ml / sec (discharge time: about 400 seconds), as Figure 28 As shown in "Experiment 3-1" of , a difference in film thickness occurs within the plane of the wafer W. On the other hand, when the above-mentioned discharge time is set to a short time of about 20 seconds, as Figure 28 As shown in "Experiment 3-2", a uniform film thickness can be obtained in side view. That is, it can be considered that if the discharge speed of the resist liquid is set to be slow, in other words, if a long time interval occurs between the start of the discharge of the resist liquid and the end of the discharge, the resist will Before the discharge of the liquid is completed, the discharged resist liquid may dry and harden. ...
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