Flip-chip led chip and preparation method thereof

A LED chip flip-chip technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing light attenuation, reducing chip life, and difficult heat dissipation, etc., and achieves large flip-chip contact area, fast heat dissipation, and heat dissipation good effect

Active Publication Date: 2017-08-29
ELEC TECH PHOTOELECTRIC TECH DALIAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the LED chip mainly dissipates heat through conduction, and the thickness of the second insulating layer is greater than 6um, and organic silica gel is used. Because the second insulating layer is thick and its thermal conductivity is low, it is still difficult to dissipate the heat, and the heat accumulates on the chip. It will affect the reliability of the chip, increase the light decay and reduce the life of the chip, and the heat conduction and reliability problems of the LED chip have not been solved.

Method used

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  • Flip-chip led chip and preparation method thereof
  • Flip-chip led chip and preparation method thereof
  • Flip-chip led chip and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Such as figure 1 As shown, the flip-chip LED chip of this embodiment includes a substrate 1 and an N-type gallium nitride layer 11, a light-emitting layer 12, and a P-type gallium nitride layer 13 grown sequentially on the surface of the substrate 1, and the P-type gallium nitride layer The layer 13 covers the reflective layer 15 , and the N-type GaN layer 11 , the light-emitting layer 12 and the P-type GaN layer 13 constitute the epitaxial layer 2 . The first insulating layer 16 covers the surface of the epitaxial layer 2 and the reflective layer 15 . A P-type electrode 31 electrically connected to the reflective layer 15 and an N-type electrode 32 electrically connected to the N-type GaN layer 11 are formed on the first insulating layer 16 . An annular cooling groove 65 penetrating to the surface of the first insulating layer 16 is formed on the P-type electrode 31 or the N-type electrode 32 . The surface of the P-type electrode 31 and the N-type electrode 32 and th...

Embodiment 2

[0065] Such as Figure 10 As shown, the flip-chip LED chip of this embodiment includes a substrate 1 and an N-type gallium nitride layer 11, a light-emitting layer 12, and a P-type gallium nitride layer 13 grown sequentially on the surface of the substrate 1, and the P-type gallium nitride layer The layer 13 covers the current spreading layer 15 ′, and the N-type GaN layer 11 , the light-emitting layer 12 and the P-type GaN layer 13 form an epitaxial layer. The first insulating layer 16' is covered on the surface of the epitaxial layer and the current spreading layer 15'. A P-type electrode 31 electrically connected to the current spreading layer 15' and an N-type electrode 32 electrically connected to the N-type gallium nitride layer 11 are formed on the first insulating layer 16'. On the N-type electrode 32, an annular cooling groove 65 penetrating to the surface of the first insulating layer 16' is formed. The surface of the P-type electrode 31 and the N-type electrode 32...

Embodiment 3

[0068] Such as Figure 11a with Figure 11b As shown, the first five steps of the preparation steps of this embodiment are the same as those of Embodiment 1, and the difference from Embodiment 1 is that the heat dissipation groove 65 is located in the middle of the chip, while the heat dissipation grooves in Embodiment 1 are located at both ends of the chip. The heat dissipation groove 65 is formed on the N-type electrode 32 . Such as Figure 12 As shown, the second insulating layer 22 covers the P-type electrode 31 , the N-type electrode 32 and the surface of the first insulating layer 16 between the P-type electrode and the N-type electrode, and fills the heat dissipation groove 65 .

[0069] Such as Figure 13a with Figure 13b As shown, a P-type electrode contact hole 29 and an N-type electrode contact hole 28 are formed on the second insulating layer 22, as well as a heat dissipation hole 45 penetrating to the surface of the N-type electrode 32. The projection of the ...

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Abstract

The invention relates to a flip LED (Light Emitting Diode) chip and a production method thereof. The flip LED chip comprises a substrate, an N-type gallium nitride layer, a light emitting layer and a P-type gallium nitride layer, wherein a reflecting layer or current spreading layer is formed on the P-type gallium nitride layer. The flip LED chip further comprises a first insulating layer, a P-type electrode, an N-type electrode, an annular heat dissipating groove, a second insulating layer, an N-shaped soldering pan, a P-shaped soldering pan and heat conduction columns, wherein the annular heat dissipating groove is formed in the P-type electrode or N-type electrode, heat dissipating holes are formed in the second insulating layer, and projections of the heat dissipating holes in the horizontal plane are located in the heat dissipating groove; the N-shaped soldering pan is deposited on the second insulating layer and is connected with the N-type electrode; the P-shaped soldering pan is deposited on the second insulating layer and is connected with the P-type electrode; the heat dissipating holes are filled with the heat conduction columns, and the tops of the heat conduction columns are level with the surface of the second insulating layer or are exposed to the second insulating layer. According to the flip LED chip and the production method thereof, the heat conduction columns penetrating through the second insulating layer are arranged on the N-type electrode or P-type electrode, so that heat can be directly conducted outwards or conducted to the P-shaped soldering pan and the N-shaped soldering pan without passing through the second insulating layer again, thus, the chip heat dissipating speed is higher, and the heat dissipating effect is better.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic chips, and in particular relates to a flip-chip LED chip and a preparation method thereof. Background technique [0002] To solve the problems of difficult heat dissipation, low luminous efficiency, and reduced reliability caused by the increase in power of LED chips, the industry has also made further improvements to the structure of LED chips. For example, the Chinese invention patent application with the publication number of 103762283 discloses a LED flip chip, which uses a structure of P pads and N pads on the chip to conduct heat, and its heat dissipation is mainly through two P / N pads on the chip. pad, and then spread the heat from the pad to the substrate by AuSn or solder paste soldering. However, the LED chip mainly dissipates heat through conduction, and the thickness of the second insulating layer is greater than 6um, and organic silica gel is used. Because the se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/64H01L33/48H01L33/00
Inventor 王冬雷陈顺利莫庆伟
Owner ELEC TECH PHOTOELECTRIC TECH DALIAN
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