Controlled DAST crystal growing device for spontaneous nucleation process

Abstract

The invention belongs to the technical field of crystal growing equipment, and relates to a controlled DAST crystal growing device for a spontaneous nucleation process. A growing cylinder is fixedly placed in a water bath cylinder filled with water bath, a silica gel plug is mounted at the opening position of the upper part of the growing cylinder in a sealed manner, and the growing cylinder is filled with DAST crystal growing solutions; an inclined polytetrafluoroethylene plate is placed in the DAST crystal growing solutions; one end of a thin glass tube is formed into a tapered opening structure and vertically penetrates through the silica gel plug; an injector is placed outside the growing cylinder and is connected with the thin glass tube in a sealed manner through a flexible PVC pipe; a thermoelectric couple is mounted at one side of the top part of the water bath cylinder, and the thermoelectric couple is inserted into the water bath; an infrared heating lamp is placed on the outer side wall of the water bath cylinder; a temperature controlled meter is placed outside the water bath cylinder and is in electrical information communication with the thermoelectric couple and the infrared heating lamp; the structure of the device is simple, the usage and the operation are convenient, the effective control of the nucleation number and the position can be realized during the crystal growing, the success rate of the grown crystals is high, and the quality of the crystals is better.

Description

Technical field: [0001] The invention belongs to the technical field of crystal growth equipment, and relates to a solution cooling growth technology for organic nonlinear optical crystals, in particular to a DAST crystal growth device with controllable spontaneous nucleation process, which can effectively control the growth through the structural design of the growth device The position and number of crystal nuclei in the solution improve the quality of DAST (4-(4-dimethylaminostyryl) picoline p-toluenesulfonate) crystals grown by the spontaneous nucleation method, and increase the size of the grown crystals. Background technique: [0002] At present, the wavelength of terahertz (THz) waves is between microwave and infrared, and it is in the transition region from electronics to photonics. It can realize three-dimensional imaging and has strong detection and identification performance. It is used in biology, medical treatment, satellite communication and military Radar has ...

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Problems solved by technology

However, this growth method also has a technical defect, that is, the number and position of crystal nuclei cannot be controlled in the growth solution. The nucleation process of this method is realized by lowering the temperature of the entire growth solution as a whole. Spontaneous nucleation can only be achieved under the drive of supersaturation, and the position and quantity of nucleation in the solution are completely random. The nucleation may be on the inclined plate or at the bottom of the cylinder. The crystal nuclei will also form the adhesion and competitive growth between the crystal nuclei, destroy the stability of the growth solution, make it difficult for the crystal to grow up, and reduce the crystal quality. If the formed crystal nuclei are at the bottom of the tank, the crystal quality is even more difficult to guarantee

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